Liquid Phase Chemical-Enhanced Oxidation for GaAs Operated Near Room Temperature

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概要

• 論文の詳細を見る

• A new chemical enhanced oxidation method for gallium arsenide (GaAs) in liquid phase near room temperature (40℃-70℃) is proposed and investigated. Featureless oxide layers with good uniformity and reliability can be grown efficiently on GaAs without any extra energy source. A relatively high oxidation rate (〓1000 A/h), about 50 times higher than that obtained during oxidation in boiling water has been realized. Based on the results of X-ray photoelectron spectroscopy (XPS), excellent chemical stability after thermal annealing as well as good chemical stoichiometry have been realized. The oxide was determined to be composed of Ga_2O_3 and AS_2O_3.

• 社団法人応用物理学会の論文
• 1998-01-15

著者

• HUANG Chien-Jung

  Department of Electrical Engineering, Southern Taiwan University of Technology

• Huang C‐j

  Southern Taiwan Univ. Technol. Tainan Twn

• Huang Chien-jung

  Department Of Applied Physics National University Of Kaohsiung

• Wang Y‐h

  National Cheng‐kung Univ. Tainan Twn

• WANG Yeong-Her

  Department of Electrical Engineering, National Cheng Kung University

• Wang Yeong-her

  Department Of Electrical Engineering National Cheng Kung University

• Houng M‐p

  National Cheng‐kung Univ. Tainan Twn

• HOUNG Mau-Phon

  Department of Electrical Engineering, National Cheng-Kung University

• Houng Mau-phon

  Department Of Electrical Engineering National Cheng Kung University

• WANG Hwei-Heng

  Department of Electrical Engineering, National Cheng-Kung University

• Wang Hwei-heng

  Department Of Electrical Engineering National Cheng-kung University

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