Quality Optimization of Liquid Phase Deposition SiO_2 Films on Silicon
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概要
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High-quality and stable silicon dioxide (SiO_2) films grown at room temperature on silicon substrates by the liquid phase deposition (LPD) method have been developed and studied. In this work, the optimum controlling parameters for obtaining the best LPD-SiO2 film refractive index are studied and found to be a growth solution of 1.3 cP and a growth solution temperature of 10℃. Maximum growth rate and refractive index are 360 Å-h and 1.483, respectively, with a leakage current of 150 fA and a dielectric breakdown field of 11.2 MV/cm.
- 社団法人応用物理学会の論文
- 2002-07-15
著者
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Huang Chien-jung
Department Of Applied Physics National University Of Kaohsiung
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Huang Chien-jung
Department Of Eleczrical Engineering Sonthern Taiwan University Of Technology
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