650 nm AlGaInP/GaInP Compressively Strained Multi-Quantum Well Light Emitting Diodes
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概要
- 論文の詳細を見る
We have studied the optical properties of the AlGaInP/GaInP light emitting diodes (LEDs), with a compressively strained multiquantum well (CSMQW) active layer, emitting at 650 nm. It was found that by introducing a compressive strain into the MQW active layer, we can significantly increase the output power of the MQW LEDs. Furthermore, we have also found that a+O.33% compressive strain can reduce the 10-90% rise time and/or fall time of the AlGaInP/GaInP MQW ILEDs from 50 ns to 15 ns.
- 社団法人応用物理学会の論文
- 1998-06-01
著者
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Chang Shoou-jinn
Department Of Electrical Engineering National Cheng Kung University
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CHANG Chih-Sung
Department of Electrical Engineering, National Cheng Kung University
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Chang Chih-sung
Department Of Electrical Engineering National Cheng Kung University
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