AlGaInP/GaP Light-Emitting Diodes Fabricated by Wafer Direct Bonding Technology

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1996-08-15

著者

• Su Yan-kuin

  Department Of Electrical Engineering National Cheng-kung University

• Su Yan-kuin

  Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit

• CHANG Shoou-Jinn

  Department of Electrical Engineering, National Cheng Kung University

• Jou Ming-jiunn

  Opto-electronics & Systems Laboratories Industrial Technology Research Institute

• Sheu J‐k

  Institute Of Optical Sciences National Central University

• CHI Gou-Chung

  Department of Physics, National Central University

• SHEU Jinn-Kong

  Department of Physics, National Central University

• Chi Gou-chung

  Department Of Physics National Central University

• Chang Shoou-jinn

  Department Of Electrical Engineering National Cheng Kung University

• Sheu Jinn-kong

  Department Of Electrical Engineering National Cheng Kung University

• Chi Gou-Chung

  Department of Optics and Photonics, National Central University, Jhongli, Taoyuan 32001, Taiwan

関連論文

• Fabrication of Oxide-Confined Collector-Up Heterojunction Bipolar Transistors
• Electron Field Emission Characteristics of Planar Field Emission Array with Diamondlike Carbon Electron Emitters
• Photoreflectance Study of InP and GaAs by Metal Organic Chemical Vapor Deposition Using Tertiarybutylphosphine and Tertiarybutylarsine Sources
• Separately Doped Structures for Red Organic Light-Emitting Diodes
• Improved Circuit Design of Multipeak Current-Voltage Characteristics Based on Resonant Tunneling Diodes
• Direct Oxidation of Si_Ge_x Layers Using Vacuum-Ultra-Violet Light Radiation in Oxygen
• Simulation and Fabrication of InGaP/Al_Ga_As/GaAs Oxide-Confined
• InGaN/GaN Light Emitting Diodes with a Lateral Current Blocking Structure
• Improvement of AlGaInP Multiple-Quantum-Well Light-Emitting Diodes by Modification of Ohmic Contact Layer
• AlGaInP Light Emitting Diode with a Modulation-Doped Superlattice
• Temperature Dependence of Barrier Height and Energy Bandgap in Au/n-GaSb Schottky Diode
• SiO_2/InP Structure Prepared by Direct Photo-Chemical Vapor Deposition Using Deuterium Lamp and Its Applications to Metal-Oxide-Semiconductor Field-Effect Transistor
• Gratings in GaN Membranes
• Gallium Nitride Diffractive Microlenses Using in Ultraviolet Micro-Optics System
• n-UV+BLUE/Green/Red White Light Emitting Diode Lamps
• GaN-Based Light Emitting Diodes with Si-Doped In_Ga_N/GaN Short Period Superlattice Current Spreading Layer
• AlGaInP/GaP Light-Emitting Diodes Fabricated by Wafer Direct Bonding Technology
• Metalorganic Vapor Phase Epitaxy Growth and Characterization of (Al_xGa_)_In_P/Ga_In_P (x=0.4, 0.7 and 1.0) Quantum Welts on 15°-Off-(100) GaAs Substrates at High Growth Rate
• Optical and Electrical Characteristics of CO_2-Laser-Treated Mg-Doped GaN Film
• Deep Traps and Mechanism of Brightness Degradation in Mn-doped ZnS Thin-Film Electroluminescent Devices Grown by Metal-Organic Chemical Vapor Deposition
• Structural and Optical Studies of ZnCdSe/ZnSe/ZnMgSSe Separate Confinement Heterostructures with Different Buffer Layers
• Enhancement of Electron Emission Characteristics of Platform-shaped Mo Emitters by Diamond-like Carbon Coatings
• The annealing effects of GaN MIS capacitors with photo-CVD oxide layers
• Effects of Redox Treatment on Diamondlike Carbon Coated Mo Substrates
• Growth of Be-doped p-type GaN under Invariant Polarity Conditions
• Enhanced Electroluminescence of Polymer Light-Emitting Diodes with Direct Polyaniline Synthesized Anodes
• Temperature Dependence in In_xGa_As/GaAs Double Quantum Well by Contactless Electroreflectance Spectroscopy
• Stability of Measurement of Heterojunction Bipolar Transistors Current-Voltage Characteristics with Thermal Effect : Semiconductors
• Effects of Trimethylgallium Flow Rate on $a$-Plane GaN Growth on $r$-Plane Sapphire during One-Sidewall-Seeded Epitaxial Lateral Overgrowth
• Deposition of SiO_2 Films on Strained SiGe Layer by Direct Photo Chemical Vapor Deposition
• AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field-Effect Transistor Based on a Liquid Phase Deposited Oxide : Semiconductors
• Electrical Properties of High-Quality Stacked CdTe/Photo-Enhanced Native Oxide for HgCdTe Passivation
• GaN and InGaN Metal-Semiconductor-Metal Photodetectors with Different Schottky Contact Metals
• Characteristics of Copper Indium Diselenide Thin Films Formed on Flexible Substrates by Electrodeposition
• 650 nm AlGaInP/GaInP Compressively Strained Multi-Quantum Well Light Emitting Diodes
• Effects of Photoinitiator on the Properties of Polymer Ball Type Polymer Dispersed Liquid Crystal Films
• Enhancing P-type Conductivity in Mg-doped GaN Using Oxygen and Nitrogen Plasma Activation
• Effects of Matrix Impedance on the Properties of Polymer Dispersed Liquid Crystal Cells
• BCl_3/Ar Plasma-Induced Surface Damage in GaInP/InGaAs/GaInP Quantum-Well High-Electron-Mobility Transistors
• Direct Growth of $a$-Plane GaN on $r$-Plane Sapphire by Metal Organic Chemical Vapor Deposition
• Photoreflectance and C-V Measurement Investigations of Dry Etched Gate Recesses for GaInP/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistors (HEMTs) Using BCl_3 /Ar Plasma
• The Layout Geometry and Power-Level Dependences of Degradation in Complementary Metal–Oxide–Semiconductor RF Power Cells from Hot-Carrier Stress with Load Pull System
• Improvement in $a$-Plane GaN Crystal Quality by Investigating Different Buffer Layer
• Four-Wavelengths-Mixed White Light Emitting Diodes with Dual-Wavelength-Pumped Green and Red Phosphors
• Effect of AlGaN Si-Doped Barrier Layer on Optical Properties of Ultraviolet Light-Emitting Diodes
• Heterostructure Fe:InP/InGaAs Metal-Semiconductor Field-Effect Transistors Grown by Metalorganic Chemical Vapor Deposition
• Electrical Properties of High-Quality Stacked CdTe/Photo-Enhanced Native Oxide for HgCdTe Passivation
• InGaN/GaN Light Emitting Diodes with a Lateral Current Blocking Structure
• Improvement of AlGaInP Multiple-Quantum-Well Light-Emitting Diodes by Modification of Ohmic Contact Layer
• Simulation and Fabrication of InGaP/Al0.98Ga0.02As/GaAs Oxide-Confined Collector-Up Heterojunction Bipolar Transistors
• Fabrication of Oxide-Confined Collector-Up Heterojunction Bipolar Transistors
• Growth of Be-doped p-type GaN under Invariant Polarity Conditions
• Optical Transitions in a Self-Assembled Ge Quantum Dot/Si Superlattice Measured by Photoreflectance Spectroscopy
• Separately Doped Structures for Red Organic Light-Emitting Diodes
• Gratings in GaN Membranes
• Light Improvement of Near Ultraviolet Light-Emitting Diodes by Utilizing Lattice-Matched InAlGaN as Barrier Layers in Active Region
• Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer
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• Oxide Confined Collector-Up Heterojunction Bipolar Transistors

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