BCl_3/Ar Plasma-Induced Surface Damage in GaInP/InGaAs/GaInP Quantum-Well High-Electron-Mobility Transistors
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概要
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BCl_3 plasma etching for gate recessiutg of GaInP/InGaAs/GaInP quantum-well high-electron-mobility transistors (QHEMTs) is found to be improved by the addition of an appropriate amount of Ar to the gas flow. The influence of the BCl_3/Ar gas flow ratio on the etching selectivity of GaAs to GaInP and surface damage was studied. Surface damage was determined using Raman spectroscopy and drain-source current to gate-source voltage (I_<ds>-V_<gs>) measurements. For the BCl_3/Ar flow ratio either lower or higher than 6/4, Raman spectra indicate that the plasma causes damage that will make the InP- and GaP-like longitudinal optical (LO) modes undergo redshift and their intensities to becoune smaller. The DC characteristics of QHEMT S_<6:4> dry-etched with 6:4 BCl_3/Ar were superior to those of the QHEMT S_<wet> wet-etched, and QHEMT S_<10:0>, dry-etched with pure BCl_3. These results show that the use of the BCl_3/Ar gas mixture has considerable potential for achieving high selectivity and low damage in GaInP/InGaAs/GaInP QHEMTs.
- 社団法人応用物理学会の論文
- 1998-06-15
著者
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Su Yan-kuin
Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit
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Kuan Hrong
Department Of Electrical Engineering Nan-tai Institute Of Technology
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KUO Chi-Wein
Department of Electrical Engineering National Cheng Kung University
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