Effect of AlGaN Si-Doped Barrier Layer on Optical Properties of Ultraviolet Light-Emitting Diodes
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概要
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InGaN/AlGaN ultraviolet light-emitting diodes (UV LEDs) with AlGaN barriers having various Si doping concentrations are grown by metal--organic chemical vapor deposition. The light output power of UV LEDs was obviously improved as a result of Si doping of the AlGaN barriers. Detail analysis of this improvement by simulation modeling showed that the increase in Si doping concentration in AlGaN barrier is beneficial for increasing electron injection efficiency and simultaneously the radiative recombination distribution.
- 2013-01-25
著者
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Su Yan-kuin
Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit
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Lu Yu-Hsuan
Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
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Fu Yi-Keng
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan
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Huang Shyh-Jer
Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
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Xuan Rong
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan
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Pilkuhn Manfred
Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
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