Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer (Special Issue : Recent Advances in Nitride Semiconductors)
スポンサーリンク
概要
著者
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Su Yan-kuin
Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit
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Su Yan-Kuin
Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C.
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Chen Jenn-Fang
Electrophysics Department, National Chiao Tung University, Hsinchu 30010, Taiwan, R. O.C.
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Lu Yu-Hsuan
Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
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Fu Yi-Keng
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan
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Xuan Rong
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan
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Xuan Rong
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan, R.O.C.
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Lu Yu-Hsuan
Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C.
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Fu Yi-Keng
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan, R.O.C.
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- Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer
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