Heterostructure Fe:InP/InGaAs Metal-Semiconductor Field-Effect Transistors Grown by Metalorganic Chemical Vapor Deposition
スポンサーリンク
概要
- 論文の詳細を見る
Novel lattice-matched Fe:InP/InGaAs heterostructure metal-semiconductor field-effect transistors (MESFETs) have been grown by metalorganic chemical vapour deposition (MOCVD). The resistivity of the epitaxially grown Fe:InP layer typically exceeds 1×10^8Ωcm. The 3d^6 one electron trap state of the Fe acceptor in InP is detected from the photoluminescence (PL). A high transconductance of 140 mS/mm is obtained for a 1-μm-gate-length MESFET fabricated by depositing the gate metal directly on the semi-insulating Fe:InP layer. S-parameter measurements of high frequency and microwave characteristics indicate a projected maximum frequency of oscillation of f_<max>=21 GHz, and a current gain cutoff occurs at approximately 7.3 GHz.
- 社団法人応用物理学会の論文
- 1995-03-15
著者
-
Su Yan-kuin
Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit
-
Shei Shin-chang
Department Of Electrical Engineering National Cheng Kung University
-
Yokoyama Meiso
Department Of Electrical Engineering National Cheng Kung University
-
Su Yan-Kuin
Department of Electrical Engineering, National Cheng Kung University
-
Shei Shin-Chang
Department of Electrical Engineering, National Cheng Kung University
関連論文
- The Effect of Li, Cu and Zn Doping on the Luminance and Conductivity of Blue ZnGa_2O_4 Phosphor
- Improvement of Cathodoluminescence for ZnGa_2O_4 Phosphor by Second Fired Process
- 以固態燒結法研製場放射顯示器之ZnGa_2O_4螢光粉
- Electron Field Emission Characteristics of Planar Field Emission Array with Diamondlike Carbon Electron Emitters
- Photoreflectance Study of InP and GaAs by Metal Organic Chemical Vapor Deposition Using Tertiarybutylphosphine and Tertiarybutylarsine Sources
- Improved Circuit Design of Multipeak Current-Voltage Characteristics Based on Resonant Tunneling Diodes
- AlGaInP Light Emitting Diode with a Modulation-Doped Superlattice
- Temperature Dependence of Barrier Height and Energy Bandgap in Au/n-GaSb Schottky Diode
- SiO_2/InP Structure Prepared by Direct Photo-Chemical Vapor Deposition Using Deuterium Lamp and Its Applications to Metal-Oxide-Semiconductor Field-Effect Transistor
- Reactive Ion Etching of ZnS Films using a Gas Mixture of Methane/Hydrogen/Argon
- A 10-in. Diagonal ZnS:Mn TFEL Panel Fabricated by a Sequential Vacuum Deposition Apparatus
- Characteristics of Indium-Tin Oxide Thin Film Etched by Reactive Ion Etching
- ZnS Thin Films Prepared by Low-Pressure Metalorganic Chemical Vapor Deposition
- AlGaInP/GaP Light-Emitting Diodes Fabricated by Wafer Direct Bonding Technology
- Optical and Electrical Characteristics of CO_2-Laser-Treated Mg-Doped GaN Film
- Multi-Color Panel Based on a White Organic Light Emitting Diode with Color Filter
- High Efficiency White Organic Light-Emitting Diodes with Double-Doped in a Single Emissive Layer
- Deep Traps and Mechanism of Brightness Degradation in Mn-doped ZnS Thin-Film Electroluminescent Devices Grown by Metal-Organic Chemical Vapor Deposition
- The Improvement of Luminance Efficiency by the Insertion of Buffer layers in Flexible Organic Light-Emitting Diodes
- The Study of Organic Light Emitting Diode with a Doped Electron Transport Layer
- Electric Field Effect on ZnSe Thin Films Prepared by Metalorganic Chemical Vapor Deposition
- Current Density-Voltage Characteristics of AC Thin-Film Electroluminescent Devices with Different Dielectric-Phosphor Interfaces
- Effects of Insulating Layers and Active Layer on ZnS:Tb, F Thin-Film Electroluminescent Devices
- Effects of [H_2S]/[DMZn] Molar Ratio on ZnS Films Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- High Dielectric Constant of RF-Sputtered HfO_2 Thin Films
- Structural and Optical Studies of ZnCdSe/ZnSe/ZnMgSSe Separate Confinement Heterostructures with Different Buffer Layers
- Enhancement of Electron Emission Characteristics of Platform-shaped Mo Emitters by Diamond-like Carbon Coatings
- The annealing effects of GaN MIS capacitors with photo-CVD oxide layers
- Effects of Redox Treatment on Diamondlike Carbon Coated Mo Substrates
- Improved light output and electrical performance of InGaN/GaN light-emitting diode by surface texturing of the n-type GaN
- 以連續性真空蒸鍍系統研製對角線十英吋ZnS:Mn 薄膜電激發光顯示屏
- Temperature Dependence in In_xGa_As/GaAs Double Quantum Well by Contactless Electroreflectance Spectroscopy
- Stability of Measurement of Heterojunction Bipolar Transistors Current-Voltage Characteristics with Thermal Effect : Semiconductors
- Effects of Trimethylgallium Flow Rate on $a$-Plane GaN Growth on $r$-Plane Sapphire during One-Sidewall-Seeded Epitaxial Lateral Overgrowth
- Ultraviolet-Patternable Polymer Insulator for Organic Thin-Film Transistors on Flexible Substrates
- Highly Efficient White Organic Light-Emitting Diodes with a p--i--n Tandem Structure
- AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field-Effect Transistor Based on a Liquid Phase Deposited Oxide : Semiconductors
- Electrical Properties of High-Quality Stacked CdTe/Photo-Enhanced Native Oxide for HgCdTe Passivation
- GaN and InGaN Metal-Semiconductor-Metal Photodetectors with Different Schottky Contact Metals
- Effect of Atomic Layer Epitaxy Growth Conditions on the Properties of ZnS Epilayers on (100)-Si Substrate
- Characteristics of Copper Indium Diselenide Thin Films Formed on Flexible Substrates by Electrodeposition
- Novel Field Emission Organic Light Emitting Diodes
- Improved Optical Transmittance and Crystal Characteristics of ZnS:TbOF Thin Film on Bi4Ti3O12/Indium Tin Oxide/Glass Substrate by Using a SiO2 Buffer Layer
- BCl_3/Ar Plasma-Induced Surface Damage in GaInP/InGaAs/GaInP Quantum-Well High-Electron-Mobility Transistors
- Atomic Layer Epitaxy of ZnS by Low-Pressure Horizontal Metalorganic Chemical Vapor Deposition
- Preparation of CuES-Coated ZnS:Ag, Cl Phosphor Film with In_2O_3 Coprecipitation
- Direct Growth of $a$-Plane GaN on $r$-Plane Sapphire by Metal Organic Chemical Vapor Deposition
- Electron Emission Behaviors of Polycrystalline-Diamond-Coated Silicon Emitters
- Increasing the Contrast Ratio of Organic Light-Emitting Diode by Organic–Metal Light-Absorbing Layer in Black Cathode
- Atomic Layer Epitaxial Growth of ZnS_xSe_1-x on Si Substrate
- Photoreflectance and C-V Measurement Investigations of Dry Etched Gate Recesses for GaInP/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistors (HEMTs) Using BCl_3 /Ar Plasma
- The Layout Geometry and Power-Level Dependences of Degradation in Complementary Metal–Oxide–Semiconductor RF Power Cells from Hot-Carrier Stress with Load Pull System
- Improvement in $a$-Plane GaN Crystal Quality by Investigating Different Buffer Layer
- Application of Inorganic/Organic Stacked Hole Transporting Layer in Organic Solar Cells
- Effect of AlGaN Si-Doped Barrier Layer on Optical Properties of Ultraviolet Light-Emitting Diodes
- Enhancing the Performance of Pentacene-Based Organic Thin Film Transistors by Inserting Stacked N,N\aku '-Diphenyl-N,N\aku '-bis(1-naphthyl-phenyl)-(1,1'-biphenyl)-4,4'-diamine and Tris(8-hydroxyquinolino)-aluminum Buffer Layers
- Heterostructure Fe:InP/InGaAs Metal-Semiconductor Field-Effect Transistors Grown by Metalorganic Chemical Vapor Deposition
- Improvement in Luminance Efficiency by Insertion of Buffer Layers in Flexible Organic Light-Emitting Diodes
- Electrical Properties of High-Quality Stacked CdTe/Photo-Enhanced Native Oxide for HgCdTe Passivation
- InGaN/GaN Light Emitting Diodes with a Lateral Current Blocking Structure
- Improvement of AlGaInP Multiple-Quantum-Well Light-Emitting Diodes by Modification of Ohmic Contact Layer
- Simulation and Fabrication of InGaP/Al0.98Ga0.02As/GaAs Oxide-Confined Collector-Up Heterojunction Bipolar Transistors
- Fabrication of Oxide-Confined Collector-Up Heterojunction Bipolar Transistors
- Growth of Be-doped p-type GaN under Invariant Polarity Conditions
- Reduction of Ohmic Contact Resistance on $n$-GaN by Surface Treatment Using Cl2 Inductively Coupled Plasma Following Laser Lift-Off
- Enhancing Efficiency of Organic Light-Emitting Diodes Using Lithium-Doped Electron Transport Layer
- Transparent Organic Thin Film Transistors Using an Oxide/Metal/Oxide Trilayer as Low-Resistance Transparent Source/Drain Electrodes
- Optical Transitions in a Self-Assembled Ge Quantum Dot/Si Superlattice Measured by Photoreflectance Spectroscopy
- Separately Doped Structures for Red Organic Light-Emitting Diodes
- Feasibility of Fabricating a Modified Volcano-Shaped Field Emitter
- Light Improvement of Near Ultraviolet Light-Emitting Diodes by Utilizing Lattice-Matched InAlGaN as Barrier Layers in Active Region
- Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer
- Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer (Special Issue : Recent Advances in Nitride Semiconductors)
- Oxide Confined Collector-Up Heterojunction Bipolar Transistors
- Atomic Layer Epitaxy of ZnS by Low-Pressure Horizontal Metalorganic Chemical Vapor Deposition