Reduction of Ohmic Contact Resistance on $n$-GaN by Surface Treatment Using Cl2 Inductively Coupled Plasma Following Laser Lift-Off
スポンサーリンク
概要
- 論文の詳細を見る
The Cr/Pt/Au ohmic contact resistance on $n$-type gallium nitrogen (GaN) is reduced by the Cl2 inductively coupled plasma (ICP) surface treatment of $n$-type GaN films following laser lift-off (LLO). X-ray photoelectron spectroscopy (XPS) shows the modified atomic ratio of the $n$-type GaN surface following the Cl2 ICP treatment. The Cl2 ICP treatment increases the atomic ratio of gallium to nitrogen. GaClx and NClx are suggested to be generated and then removed using a boiling HCl solution. Nitrogen vacancies at the $n$-type GaN surface are therefore produced and act as donors for electrons, reducing ohmic contact resistance induced by reducing the resistivity of electrons to conduction.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-03-15
著者
-
Chen Shi-ming
Epitech Technology Corporation
-
Yokoyama Meiso
Department Of Electrical Engineering National Cheng Kung University
-
SU Shui-Hsiang
Department of Electronic Engineering
-
HOU Cheng-Chieh
Department of Electronic Engineering
-
Lin Ming-hsun
Department Of Electronic Engineering I-shou University
-
Hou Cheng-Chieh
Department of Electronic Engineering, I-Shou University, Kaohsiung County, Taiwan, R.O.C.
-
Kuan Hon
Department of Electrical Engineering Far East College, Tainan 744, Taiwan
-
Su Shui-Hsiang
Department of Electronic Engineering, I-Shou University, Kaohsiung County, Taiwan, R.O.C.
-
Chen Shi-Ming
Epitech Technology Corporation, No. 10 Da-Shuen 9th Rd, Tainan Science-Based Industrial Park, Tainan County, Taiwan, R.O.C.
-
Yokoyama Meiso
Department of Electronic Engineering, I-Shou University, Kaohsiung County, Taiwan, R.O.C.
-
Lin Ming-Hsun
Department of Electronic Engineering, I-Shou University, Kaohsiung County, Taiwan, R.O.C.
関連論文
- The Effect of Li, Cu and Zn Doping on the Luminance and Conductivity of Blue ZnGa_2O_4 Phosphor
- Improvement of Cathodoluminescence for ZnGa_2O_4 Phosphor by Second Fired Process
- 以固態燒結法研製場放射顯示器之ZnGa_2O_4螢光粉
- Fabrication of Oxide-Confined Collector-Up Heterojunction Bipolar Transistors
- Electron Field Emission Characteristics of Planar Field Emission Array with Diamondlike Carbon Electron Emitters
- Simulation and Fabrication of InGaP/Al_Ga_As/GaAs Oxide-Confined
- InGaN/GaN Light Emitting Diodes with a Lateral Current Blocking Structure
- Improvement of AlGaInP Multiple-Quantum-Well Light-Emitting Diodes by Modification of Ohmic Contact Layer
- AlGaInP Light Emitting Diode with a Modulation-Doped Superlattice
- SiO_2/InP Structure Prepared by Direct Photo-Chemical Vapor Deposition Using Deuterium Lamp and Its Applications to Metal-Oxide-Semiconductor Field-Effect Transistor
- Reactive Ion Etching of ZnS Films using a Gas Mixture of Methane/Hydrogen/Argon
- A 10-in. Diagonal ZnS:Mn TFEL Panel Fabricated by a Sequential Vacuum Deposition Apparatus
- Characteristics of Indium-Tin Oxide Thin Film Etched by Reactive Ion Etching
- ZnS Thin Films Prepared by Low-Pressure Metalorganic Chemical Vapor Deposition
- Optical and Electrical Characteristics of CO_2-Laser-Treated Mg-Doped GaN Film
- Multi-Color Panel Based on a White Organic Light Emitting Diode with Color Filter
- High Efficiency White Organic Light-Emitting Diodes with Double-Doped in a Single Emissive Layer
- Deep Traps and Mechanism of Brightness Degradation in Mn-doped ZnS Thin-Film Electroluminescent Devices Grown by Metal-Organic Chemical Vapor Deposition
- The Improvement of Luminance Efficiency by the Insertion of Buffer layers in Flexible Organic Light-Emitting Diodes
- The Study of Organic Light Emitting Diode with a Doped Electron Transport Layer
- Reduction of Ohmic Contact Resistance on n-GaN by Surface Treatment Using Cl_2 Inductively Coupled Plasma Following Laser Lift-Off
- Electric Field Effect on ZnSe Thin Films Prepared by Metalorganic Chemical Vapor Deposition
- Current Density-Voltage Characteristics of AC Thin-Film Electroluminescent Devices with Different Dielectric-Phosphor Interfaces
- Effects of Insulating Layers and Active Layer on ZnS:Tb, F Thin-Film Electroluminescent Devices
- Effects of [H_2S]/[DMZn] Molar Ratio on ZnS Films Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- High Dielectric Constant of RF-Sputtered HfO_2 Thin Films
- Enhancement of Electron Emission Characteristics of Platform-shaped Mo Emitters by Diamond-like Carbon Coatings
- Effects of Redox Treatment on Diamondlike Carbon Coated Mo Substrates
- Improved light output and electrical performance of InGaN/GaN light-emitting diode by surface texturing of the n-type GaN
- 以連續性真空蒸鍍系統研製對角線十英吋ZnS:Mn 薄膜電激發光顯示屏
- Ultraviolet-Patternable Polymer Insulator for Organic Thin-Film Transistors on Flexible Substrates
- AlGaN Ultraviolet Metal-Semiconductor-Metal Photodetectors with Low-Temperature-Grown Cap Layers
- Output Power Enhancement of GaN-Based Light-Emitting Diodes Using Circular-Gear Structure
- Highly Efficient White Organic Light-Emitting Diodes with a p--i--n Tandem Structure
- Effect of Atomic Layer Epitaxy Growth Conditions on the Properties of ZnS Epilayers on (100)-Si Substrate
- Enhanced Performance of Vertical GaN-Based Light-Emitting Diodes with a Current-Blocking Layer and Electroplated Nickel Substrate
- Enhancing Efficiency of Organic Light-Emitting Diodes Using a Carbon-Nanotube-Doped Hole Injection Layer
- Novel Field Emission Organic Light Emitting Diodes
- Increasing the Fill Factor and Power Conversion Efficiency of Polymer Photovoltaic Cell Using V2O5/CuPc as a Buffer Layer
- Improved Optical Transmittance and Crystal Characteristics of ZnS:TbOF Thin Film on Bi4Ti3O12/Indium Tin Oxide/Glass Substrate by Using a SiO2 Buffer Layer
- Atomic Layer Epitaxy of ZnS by Low-Pressure Horizontal Metalorganic Chemical Vapor Deposition
- Preparation of CuES-Coated ZnS:Ag, Cl Phosphor Film with In_2O_3 Coprecipitation
- Electron Emission Behaviors of Polycrystalline-Diamond-Coated Silicon Emitters
- Increasing the Contrast Ratio of Organic Light-Emitting Diode by Organic–Metal Light-Absorbing Layer in Black Cathode
- Atomic Layer Epitaxial Growth of ZnS_xSe_1-x on Si Substrate
- Application of Inorganic/Organic Stacked Hole Transporting Layer in Organic Solar Cells
- Enhancing the Efficiency and Contrast Ratio of White Organic Light-Emitting Diode Using Energy-Recyclable Photovoltaic Cells
- Enhancing the Performance of Pentacene-Based Organic Thin Film Transistors by Inserting Stacked N,N\aku '-Diphenyl-N,N\aku '-bis(1-naphthyl-phenyl)-(1,1'-biphenyl)-4,4'-diamine and Tris(8-hydroxyquinolino)-aluminum Buffer Layers
- AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Low-Temperature-Grown Cap Layers
- Heterostructure Fe:InP/InGaAs Metal-Semiconductor Field-Effect Transistors Grown by Metalorganic Chemical Vapor Deposition
- Improvement in Luminance Efficiency by Insertion of Buffer Layers in Flexible Organic Light-Emitting Diodes
- InGaN/GaN Light Emitting Diodes with a Lateral Current Blocking Structure
- Improvement of AlGaInP Multiple-Quantum-Well Light-Emitting Diodes by Modification of Ohmic Contact Layer
- Simulation and Fabrication of InGaP/Al0.98Ga0.02As/GaAs Oxide-Confined Collector-Up Heterojunction Bipolar Transistors
- Fabrication of Oxide-Confined Collector-Up Heterojunction Bipolar Transistors
- Reduction of Ohmic Contact Resistance on $n$-GaN by Surface Treatment Using Cl2 Inductively Coupled Plasma Following Laser Lift-Off
- Enhancing Efficiency of Organic Light-Emitting Diodes Using Lithium-Doped Electron Transport Layer
- Transparent Organic Thin Film Transistors Using an Oxide/Metal/Oxide Trilayer as Low-Resistance Transparent Source/Drain Electrodes
- Feasibility of Fabricating a Modified Volcano-Shaped Field Emitter
- Oxide Confined Collector-Up Heterojunction Bipolar Transistors
- Atomic Layer Epitaxy of ZnS by Low-Pressure Horizontal Metalorganic Chemical Vapor Deposition