Improvement of AlGaInP Multiple-Quantum-Well Light-Emitting Diodes by Modification of Ohmic Contact Layer
スポンサーリンク
概要
- 論文の詳細を見る
A meshed contact layer was proposed to enhance the current-spreading ability of AlInGaP light-emitting diodes (LEDs). Via the modification of the contact layer, the luminous intensity was increased by a factor of 1.16 compared with that of the conventional LEDs at a wavelength of 570 nm. Moreover, the brightness reliability of such a new structure was found to be superior to that of conventional structures.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
-
Chen Wen-ben
Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit
-
Chen Shi-ming
Epitech Technology Corporation
-
Li Wen-liang
Epitech Technology Corporation
-
Su Yan-kuin
Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit
-
Wang Hsin-chuan
Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit
-
Lin Chun-liang
Department Of Advanced Materials Science Graduate School Of Frontier Science University Of Tokyo
-
Li Wen-Liang
Epitech Technology Corporation, No. 10 Da-Shuen 9th Rd, Tainan Science-Based Industrial Park, Tainan, Taiwan 74145
-
Chen Wen-Ben
Department of Electrical Engineering and Institute of Microelectronics, National Cheng Kung University, No. 1 University Road, Tainan, Taiwan 70101
-
Chen Shi-Ming
Epitech Technology Corporation, No. 10 Da-Shuen 9th Rd, Tainan Science-Based Industrial Park, Tainan, Taiwan 74145
-
Wang Hsin-Chuan
Department of Electrical Engineering and Institute of Microelectronics, National Cheng Kung University, No. 1 University Road, Tainan, Taiwan 70101
関連論文
- Fabrication of Oxide-Confined Collector-Up Heterojunction Bipolar Transistors
- Photoreflectance Study of InP and GaAs by Metal Organic Chemical Vapor Deposition Using Tertiarybutylphosphine and Tertiarybutylarsine Sources
- Improved Circuit Design of Multipeak Current-Voltage Characteristics Based on Resonant Tunneling Diodes
- Simulation and Fabrication of InGaP/Al_Ga_As/GaAs Oxide-Confined
- InGaN/GaN Light Emitting Diodes with a Lateral Current Blocking Structure
- Improvement of AlGaInP Multiple-Quantum-Well Light-Emitting Diodes by Modification of Ohmic Contact Layer
- AlGaInP Light Emitting Diode with a Modulation-Doped Superlattice
- Temperature Dependence of Barrier Height and Energy Bandgap in Au/n-GaSb Schottky Diode
- SiO_2/InP Structure Prepared by Direct Photo-Chemical Vapor Deposition Using Deuterium Lamp and Its Applications to Metal-Oxide-Semiconductor Field-Effect Transistor
- AlGaInP/GaP Light-Emitting Diodes Fabricated by Wafer Direct Bonding Technology
- Deep Traps and Mechanism of Brightness Degradation in Mn-doped ZnS Thin-Film Electroluminescent Devices Grown by Metal-Organic Chemical Vapor Deposition
- Reduction of Ohmic Contact Resistance on n-GaN by Surface Treatment Using Cl_2 Inductively Coupled Plasma Following Laser Lift-Off
- Structural and Optical Studies of ZnCdSe/ZnSe/ZnMgSSe Separate Confinement Heterostructures with Different Buffer Layers
- The annealing effects of GaN MIS capacitors with photo-CVD oxide layers
- Temperature Dependence in In_xGa_As/GaAs Double Quantum Well by Contactless Electroreflectance Spectroscopy
- Stability of Measurement of Heterojunction Bipolar Transistors Current-Voltage Characteristics with Thermal Effect : Semiconductors
- Effects of Trimethylgallium Flow Rate on $a$-Plane GaN Growth on $r$-Plane Sapphire during One-Sidewall-Seeded Epitaxial Lateral Overgrowth
- AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field-Effect Transistor Based on a Liquid Phase Deposited Oxide : Semiconductors
- Electrical Properties of High-Quality Stacked CdTe/Photo-Enhanced Native Oxide for HgCdTe Passivation
- GaN and InGaN Metal-Semiconductor-Metal Photodetectors with Different Schottky Contact Metals
- Improvement in the Light Output Power of GaN-Based Light Emitting Diodes by One-Step Current Blocking Design
- Characteristics of Copper Indium Diselenide Thin Films Formed on Flexible Substrates by Electrodeposition
- BCl_3/Ar Plasma-Induced Surface Damage in GaInP/InGaAs/GaInP Quantum-Well High-Electron-Mobility Transistors
- Direct Growth of $a$-Plane GaN on $r$-Plane Sapphire by Metal Organic Chemical Vapor Deposition
- Photoreflectance and C-V Measurement Investigations of Dry Etched Gate Recesses for GaInP/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistors (HEMTs) Using BCl_3 /Ar Plasma
- The Layout Geometry and Power-Level Dependences of Degradation in Complementary Metal–Oxide–Semiconductor RF Power Cells from Hot-Carrier Stress with Load Pull System
- Improvement in $a$-Plane GaN Crystal Quality by Investigating Different Buffer Layer
- Structure of Silicene Grown on Ag(111)
- Effect of AlGaN Si-Doped Barrier Layer on Optical Properties of Ultraviolet Light-Emitting Diodes
- Heterostructure Fe:InP/InGaAs Metal-Semiconductor Field-Effect Transistors Grown by Metalorganic Chemical Vapor Deposition
- Electrical Properties of High-Quality Stacked CdTe/Photo-Enhanced Native Oxide for HgCdTe Passivation
- InGaN/GaN Light Emitting Diodes with a Lateral Current Blocking Structure
- Improvement of AlGaInP Multiple-Quantum-Well Light-Emitting Diodes by Modification of Ohmic Contact Layer
- Simulation and Fabrication of InGaP/Al0.98Ga0.02As/GaAs Oxide-Confined Collector-Up Heterojunction Bipolar Transistors
- Fabrication of Oxide-Confined Collector-Up Heterojunction Bipolar Transistors
- Growth of Be-doped p-type GaN under Invariant Polarity Conditions
- Reduction of Ohmic Contact Resistance on $n$-GaN by Surface Treatment Using Cl2 Inductively Coupled Plasma Following Laser Lift-Off
- Optical Transitions in a Self-Assembled Ge Quantum Dot/Si Superlattice Measured by Photoreflectance Spectroscopy
- Separately Doped Structures for Red Organic Light-Emitting Diodes
- Light Improvement of Near Ultraviolet Light-Emitting Diodes by Utilizing Lattice-Matched InAlGaN as Barrier Layers in Active Region
- Enhancement of Light Extraction Efficiency in GaN-Based Blue Light-Emitting Diodes by Doping TiO
- Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer
- Enhancement of Light Extraction Efficiency in GaN-Based Blue Light-Emitting Diodes by Doping TiO₂ Nanoparticles in Specific Region of Encapsulation Silicone (Special Issue : Recent Advances in Nitride Semiconductors)
- Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer (Special Issue : Recent Advances in Nitride Semiconductors)
- Oxide Confined Collector-Up Heterojunction Bipolar Transistors
- 29pXK-5 Loss of Dirac fermions for the first layer silicene grown on Ag(111)