Simulation and Fabrication of InGaP/Al_<0.98>Ga_<0.02>As/GaAs Oxide-Confined

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-08-15

著者

• Chen S‐m

  Epitech Technology Corporation

• Chen Shi-ming

  Epitech Technology Corporation

• Chen W‐b

  Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit

• Su Y‐k

  National Cheng Kung Univ. Tainan Twn

• Chen Wen-bin

  Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit

• Lin C‐l

  National Chiao‐tung Univ. Hsinchu Twn

• Su Yan-kuin

  Department Of Electrical Engineering National Cheng-kung University

• Lin Chun-liang

  Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit

• WANG Hsin-Chuan

  Department of Electrical Engineering and Institute of Microelectronics, National Cheng Kung Universi

• YU Hsin-Chieh

  Department of Electrical Engineering, Institute of Mocroelectronics, National Cheng Kung University

• SU Juh-Yuh

  Epitech Technology Corporation

• Wang Hung-chang

  Department Of Materials Science And Engineering National Chiao Tung University

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