High Temperature Stability 850-nm In_<0.15>Al_<0.08>Ga_<0.77>As/Al_<0.3>Ga_<0.7>As Vertical-Cavity Surface-Emitting Laser with Single Al_<0.75>Ga_<0.25>As Current Blocking Layer
スポンサーリンク
概要
- 論文の詳細を見る
- 2005-08-10
著者
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Kuo Hao-chung
Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University
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Kuo Hao‐chung
National Chiao Tung Univ. Hsinchu Twn
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Kuo Hao-chung
Institute Of Electro-optical Engineering National Chiao Tung University
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Wang S‐c
Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University
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CHANG Yi-An
Institute of Electro-Optical Engineering, National Chiao-Tung University
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WANG Shing-Chung
Institute of Electro-Optical Engineering, National Chiao-Tung University
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LAI Fang-I
Institute of Electro-Optical Engineering, National Chiao-Tung University
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YU Hsin-Chieh
Department of Electrical Engineering, Institute of Mocroelectronics, National Cheng Kung University
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LAIH Li-Wen
Department of Electrical Engineering, Ching Yun University
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YU Chun-Lung
Department of Electrical Engineering, Ching Yun University
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Lai Fang-i
Department Of Electronic Engineering Ching Yun University
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Yu Chang-chin
Institute Of Electro-optical Engineering National Chiao Tung University
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Laih Li-wen
Department Of Electrical Engineering Ching Yun University
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Lai Fang-i.
Department Of Electronic Engineering Ching Yun University
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Wang Shing-chung
Institute Of Electro-optical Engineering National Chiao Tung University
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Yu Hsin-chieh
Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit
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Yu Hsin‐chieh
National Cheng Kung Univ. Tainan Twn
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Yu Hsin-chieh
Institute Of Microelectronics Department Of Electrical Engineering And Advanced Optoelectronic Techn
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Lai Fang-I
Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30050, Taiwan
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