Comparison of p-Side Down and o-Side Up GaN Light-Emitting Diodes Fabricatied by Laser Lift-Off
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-02-15
著者
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Lin Chia-feng
Institute Of Electro-optical Engineering National Chiao Tung University
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WANG Shing-Chung
Institute of Electro-Optical Engineering, National Chiao-Tung University
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YU Chang-Chin
Institute of Electro-Optical Engineering, National Chiao Tung University
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CHU Chen-Fu
Institute of Electro-Optical Engineering, National Chiao Tung University
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Yu Chang-chin
Institute Of Electro-optical Engineering National Chiao Tung University
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CHENG Hao-Chun
Institute of Electro-Optical Engineering, National Chiao Tung University
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Cheng Hao-chun
Institute Of Electro-optical Engineering National Chiao Tung University
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Wang Shing-chung
Institute Of Electro-optical Engineering National Chiao Tung University
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Chu Chen-fu
Institute Of Electro-optical Engineering National Chiao Tung University
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Lin C‐f
Institute Of Electro-optical Engineering National Chiao Tung University
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- Comparison of p-Side Down and p-Side Up GaN Light-Emitting Diodes Fabricated by Laser Lift-Off