Beryllium-Implanted P-Type GaN With High Carrier Concentration : Semiconductors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-05-01
著者
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Wang S‐c
Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University
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Lin C‐f
National Chiao Tung Univ. Hsinchu Twn
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Lin Chia-feng
Institute Of Electro-optical Engineering National Chiao Tung University
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WANG Shing-Chung
Institute of Electro-Optical Engineering, National Chiao-Tung University
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YU Chang-Chin
Institute of Electro-Optical Engineering, National Chiao Tung University
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CHU Chen-Fu
Institute of Electro-Optical Engineering, National Chiao Tung University
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TSAI Juen-Yen
Institute of Electro-Optical Engineering, National Chiao Tung University
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LAN Wen-How
Chung-Shan Institute of Science & Technology
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CHIANG Chung-I.
Chung-Shan Institute of Science & Technology
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Chiang C‐i
Materials R&d Center Chung Shan Inst. Sci. & Technol. Taoyuan Twn
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Yu Chang-chin
Institute Of Electro-optical Engineering National Chiao Tung University
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Wang Shing-chung
Institute Of Electro-optical Engineering National Chiao Tung University
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Chu Chen-fu
Institute Of Electro-optical Engineering National Chiao Tung University
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Lan Wen-how
Chung-shan Institute Of Science & Technology
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Tsai Juen-yen
Institute Of Electro-optical Engineering National Chiao Tung University
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WANG Shing-Chung
Institute of Electro-Optical Engineering, National Chiao Tung University
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CHIANG Chung-I.
Chung-Shan Institute of Science & Technology
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