Reaction Mechanism of Mercury-Sensitized Photochemical Vapor Deposited Silicon Oxide
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-01-15
著者
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Huang K‐f
National Chiao Tung Univ. Hsinchu Twn
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Huang Kai-fung
Department Of Electrophysics National Chiao Tung University
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Huang Kai-feng
Department Of Electrophysics National Chiao Tung University
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Huang Kai-feng
Electrophysics Department National Chiao-tung University
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Lan W‐h
Chung‐shan Inst. Sci. And Technol. Tao‐yuan Twn
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LAN Wen-How
Chung-Shan Institute of Science & Technology
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LIN Wen-Jen
Chung Shan Institute of Science and Technology
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TU Shun-Lih
Chung Shan Institute of Science and Technology
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YANG Sheng-Jenn
Chung Shan Institute of Science and Technology
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Huang Kai-feng
Electro Physics Department National Chiao-tung University
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Tu S‐l
Chung Shang Inst. Sci. And Technol. Taoyuan Twn
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Yang S‐j
Shanghai Jiaotong Univ. Shanghai Chn
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- Growth of Epitaxial-Like (Sr_Ba_)Nb_2O_6 Ferroelectric Films
- Reaction Mechanism of Mercury-Sensitized Photochemical Vapor Deposited Silicon Oxide
- Formation of Self-organized GaN Dots on Al_Ga_N by Alternating Supply of Source Precursors
- Phosphorus-Species-Induced Band-Gap Anomaly in InGaP Grown by Solid-Source Molecular-Beam Epitaxy
- Deep Hole Teaps Created by Gamma-Ray lrradiation of GaInP : Semiconductors
- Gamma-Ray Induced Deep Electron Traps in GalnP : Semiconductors
- Temperature and Annealing Effects on Photoluminescence Spectra of (InAs)_1/(GaP)_2 Superlattices Grown by Solid-Source Molecular Beam Epitaxy
- Reduction of Spontaneous Surface Segregation in (InP)_2/(GaP)_2 Quantum Wells Grown on Tilted Substrates
- Ordering Reduction in In_Ga_P Grown by Solid Source Molecular Beam Epitaxy
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- Generation of THz Radiation from Resonant Absorption in Strained Multiple Quantum Wells in a Magnetic Field : Optics and Quantum Electronics
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