Formation of Self-organized GaN Dots on Al_<0.11>Ga_<0.89>N by Alternating Supply of Source Precursors
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2004-06-15
著者
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Chen W‐k
Department Of Electrophysics National Chiao Tung University
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LIN Wen-Jen
Chung Shan Institute of Science and Technology
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Huang Huai-ying
Department Of Electrophysics National Chiao Tung University
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KE Wen-Cheng
Department of Electrophysics, National Chiao Tung University
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KU Ching-Shun
Department of Electrophysics, National Chiao Tung University
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YEN Kao-Hsi
Department of Electrophysics, National Chiao Tung University
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LEE Ling
Department of Electrophysics, National Chiao Tung University
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CHEN Wei-Kuo
Department of Electrophysics, National Chiao Tung University
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CHOU Wu-Ching
Department of Electrophysics, National Chiao Tung University
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LEE Ming-Chih
Department of Electrophysics, National Chiao Tung University
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CHEN Wen-Hsiung
Department of Electrophysics, National Chiao Tung University
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CHENG Yi-Cheng
Chung-Shan Institute of Science and Technology
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CHERNG Ya-Tong
Chung-Shan Institute of Science and Technology
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Lee M‐c
Department Of Electrophysics National Chiao Tung University
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Yen Kao-hsi
Department Of Electrophysics National Chiao Tung University
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Lin Wen-jen
Chung-shan Institute Of Science And Technology
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Chou Wu-ching
Department Of Electrophysics National Chiao Tung University
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Chen Wei-kuo
Department Of Electrophysics Chiao-tung University
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Lee Ming-chih
Department Of Electrophysics National Chiao Tung University
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Ku Ching-shun
Department Of Electrophysics National Chiao Tung University
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Ke Wen-cheng
Department Of Electrophysics National Chiao Tung University
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Lee Ling
Department Of Electrophysics National Chiao Tung University
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Chuang W‐c
Department Of Electrophysics National Chiao Tung University
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