Influence of Thermodynamic Factors on Growth of AlAs_<1-x>Sb_x Alloys
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概要
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Epitaxial layers of AlAs_<1-x>Sb_x have been prepared by metalorganic vapor phase deposition (MOCVD) in a horizontal, atmospheric-pressure quartz reactor. The influences of the V/III ratio and the input partial pressure of trimethylantimony were systematically studied. The experimental results are in good agreement with the calculated ones, based on thermodynamic considerations, which implies that the growth of AlAsSb in MOCVD is controlled predominantly by thermodynamics.
- 社団法人応用物理学会の論文
- 1994-10-01
著者
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Chen Wei-kuo
Department Of Electrophysics Chiao-tung University
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CHIN Ming-Ta
Department of Electrophysics, Chiao-Tung University
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Chin Ming-ta
Department Of Electrophysics Chiao-tung University
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