Photoluminescence Studies of In-Doped GaN:Mg Films

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概要

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• Photoluminescence (PL) studies of In-doped GaN:Mg films revealed that the Mg-related emission at 3.1 eV is enhanced by more than one order of magnitude on the shoulder of the broad band centered at 2.8 eV for GaN:Mg after an optimal In concentration was added into the films. This enhancement of the 3.1 eV band is believed to be associated with the reduction in the number of self-compensation centers. A slow decay in PL intensity evolution was also observed, which may be ascribed to a local energy barrier that impedes carriers that relax into the valence band. The temperature dependences of the decay time constants were measured and a barrier energy as high as ${\sim}103\pm 7$ meV was obtained for In-doped GaN:Mg as compared with $69\pm 8$ meV for GaN:Mg.

• 2005-10-15

著者

• Huang Huai-ying

  Department Of Electrophysics National Chiao Tung University

• CHEN Wen-Hsiung

  Department of Electrophysics, National Chiao Tung University

• Chang Fu-chin

  Department Of Electrophysics National Chiao Tung University

• Chen Wei-kuo

  Department Of Electrophysics Chiao-tung University

• Lee Ming-chih

  Department Of Electrophysics National Chiao Tung University

• Chou Wu-Chin

  Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan 300, Republic of China

• Huang Huai-Ying

  Department of SASIC, TSMC, Hsinchu, Taiwan 300, Republic of China

• Chang Fu-Chin

  Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan 300, Republic of China

• Chen Wei-Kuo

  Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan 300, Republic of China

• Lee Ming-Chih

  Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan 300, Republic of China

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