Optical Properties of Uncapped InN Nanodots Grown at Various Temperatures
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概要
- 論文の詳細を見る
Photoluminescence (PL) measurements were employed to investigate the emission properties of uncapped InN nanodot samples grown at temperature from 550 to 725 °C. Our results indicate that once the In droplets are formed, the optical properties of InN dots deteriorate markedly. As for those droplet-free samples grown at temperatures ${\geq}600$ °C, good luminescence properties are obtained. The corresponding 20 K PL peak energy is found to be almost constant at approximately 0.77 eV with a slow increase in its linewidth from 71 to 74 meV. A strong temperature-induced energy blue shift at approximately 20 to 280 K is considered to be partially connected to the band-filling effects of thermally stimulated surface electrons.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-03-25
著者
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Chou Wu-ching
Department Of Electrophysics National Chiao Tung University
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Chen Wei-kuo
Department Of Electrophysics Chiao-tung University
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Lee Ming-chih
Department Of Electrophysics National Chiao Tung University
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Ke Wen-cheng
Department Of Electrophysics National Chiao Tung University
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Lee Ling
Department Of Electrophysics National Chiao Tung University
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Lee Ling
Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China
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Chou Wu-Ching
Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China
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Fu Shao-Fu
Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China
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Ke Wen-Cheng
Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China
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Chang Wen-Hao
Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China
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Chen Ching-Yu
Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China
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Tai Shin-Kai
Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China
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Chen Wei-Kuo
Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China
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