Luminescence Intensity Reduction in Mg-Doped GaN Grown by Metalorganic Chemical Vapor Phase Epitaxy : Semiconductors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-04-01
著者
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Chen W‐k
Department Of Electrophysics National Chiao Tung University
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Lee W‐h
National Chiao‐tung Univ. Twn
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Shu Chen-ke
Department Of Electrophysics National Chiao Tung University
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Pan Yung-chung
Department Of Electrophysics National Chiao-tung University
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Chang H
Korea Res. Inst. Of Chemical Technol. Taejon Kor
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Huang Huai-ying
Department Of Electrophysics National Chiao Tung University
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CHEN Wei-Kuo
Department of Electrophysics, National Chiao Tung University
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LEE Ming-Chih
Department of Electrophysics, National Chiao Tung University
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CHEN Wen-Hsiung
Department of Electrophysics, National Chiao Tung University
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CHEN HSIAO-Hui
Department of Electrophysics, National Chiao Tung University
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LEE Wen-Hsiung
Department of Electrophysics, National Chiao Tung University
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OU Jehn
Department of Electrophysics, National Chiao Tung University
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Lee W‐h
National Chung‐cheng Univ. Chia‐yi Twn
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Lee M‐c
Department Of Electrophysics National Chiao Tung University
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Ou J
Department Of Electrophysics National Chiao Tung University
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Ou Jehn
Department Of Electrophysics Chiao-tung University
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Chen Wei-kuo
Department Of Electrophysics Chiao-tung University
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Lee Ming-chih
Department Of Electrophysics National Chiao Tung University
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Chen Hsiao-hui
Department Of Electrophysics National Chiao Tung University
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Lee Wen-hsiung
Department Of Electrophysics National Chiao-tung University
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Chuang W‐c
Department Of Electrophysics National Chiao Tung University
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