Raman Characterizations of Ruthenium Dichalcogenides

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-07-15

著者

• Huang Y‐s

  National Taiwan Univ. Sci. And Technol. Taipei Twn

• Huang Ying-sheng

  Department Of Electronic Engineering National Taiwan Institute Of Technology

• LEE Ming-Chih

  Department of Electrophysics, National Chiao Tung University

• HWANG Song-Tzer

  Department of Electrophysics, National Chiao Tung University

• HUANG Jeng-Kuang

  Department of Electronic Engineering, National Taiwan Institute of Technology

• Huang Y‐s

  Department Of Electronic Engineering National Taiwan University Of Science And Technology

• Lee M‐c

  Department Of Electrophysics National Chiao Tung University

• Lee Ming-chih

  Department Of Electrophysics National Chiao Tung University

• Hwang Song-tzer

  Department Of Electrophysics National Chiao Tung University

• Huang Jeng-kuang

  Department Of Electronic Engineering National Taiwan Institute Of Technology

関連論文

• Formation of Self-organized GaN Dots on Al_Ga_N by Alternating Supply of Source Precursors
• Luminescence Intensity Reduction in Mg-Doped GaN Grown by Metalorganic Chemical Vapor Phase Epitaxy : Semiconductors
• Temperature Dependent Polarized-Piezoreflectance Study of Near Direct Band Edge Interband Transitions of AlInP_2 : Optical Properties of Condensed Matter
• Direct-Gap Reduction and Valence-Band Splitting of Ordered Indirect-Gap AlInP_2 Studied by Polarized Piezoreflectance
• Temperature Dependence of Quantized States in Strained-Layer In_Ga_As/GaAs Single Quantum Well
• Raman Scattering of Fe_xRuS_2 Mixed Crystals
• Raman Characterizations of Ruthenium Dichalcogenides
• Optical Properties of Zn_Cd_xSe Epilayers Grown on (100) GaAs by Molecular Beam Epitaxy
• Influence of Sapphire Nitridation on Properties of Indium Nitride Prepared by Metalorganic Vapor Phase Epitaxy
• Long-Term Photocapacitance Decay Behavior in Undoped GaN : Semiconductors
• Comparative Study of Schottky Diode Characteristics in Ni, Ta and Ni/Ta Metal Contact Schemes on n-GaN : Semiconductors
• A High-Temperature Thermodynamic Model for Metalorganic Vapor Phase Epitaxial Growth of InGaN
• Raman and X-Ray Studies of InN Films Grown at Different Temperatures by Metalorganic Vapor Phase Epitaxy
• An Elucidation of Solid Incorporation of InGaN Grown by Metalorganic Vapor Phase Epitaxy
• Growth and X-ray Characterization of an InN Film on Sapphire Prepared by Metalorganic Vapor Phase Epitaxy
• Crystalline Structure Changes in GaN Films Grown at Different Temperatures
• Temperature Dependence of Quantized States in a GaAs/Al_Ga_As Asymmetric Triangular Quantum Well Heterostructure
• Effects of Thermal Annealing on Ni/Ta/n-GaN Schottky Diodes : Semiconductors
• Structural and Optical Studies of ZnCdSe/ZnSe/ZnMgSSe Separate Confinement Heterostructures with Different Buffer Layers
• Growth Temperature Reduction for Isoelectronic As-Doped GaN
• ESR Investigation of a Spin 1/2 Chlorine-Associated Defect in Synthetic FeS_2 Crystals
• Second Harmonic Electroreflectance Study of AlGaAs-GaAs Asymmetric Triangular and Coupled Double Quantum Wells
• Correlation of Photoreflectance Spectra with Performance of GaInP/GaAs Heterojunction Bipolar Transistors : Semiconductors
• Temperature Dependence in In_xGa_As/GaAs Double Quantum Well by Contactless Electroreflectance Spectroscopy
• Polarized Thermoreflectance and Reflectance Study of ReS2 and ReS2:Au Single Crystals
• Current Properties of GaN V-Defect Using Conductive Atomic Force Microscopy
• Temperature Dependence of the Band-Edge Transitions of ZnCdBeSe
• Pattern Growth and Field Emission Characteristics of Flower-Like RuO2 Nanostructures
• Photoluminescence Studies of In-Doped GaN:Mg Films
• Optical Properties of Zn1-xCdxSe Epilayers Grown on (100) GaAs b y Molecular Beam Epitaxy
• Optical Properties of Uncapped InN Nanodots Grown at Various Temperatures
• A Comprehensive Study on the Optical Properties of Thin Gold-Doped Rhenium Disulphide Layered Single Crystals
• Optical and Electrical Properties of Au- and Ag-Doped ReSe
• Influence of Sapphire Nitridation on Properties of Indium Nitride Prepared by Metalorganic Vapor Phase Epitaxy
• Raman and X-Ray Studies of InN Films Grown at Different Temperatures by Metalorganic Vapor Phase Epitaxy
• CW Laser Heating Effects and Mode Splitting of the Raman Spectra of the (Dy and Y)Ba2Cu3O7-δ Superconductors
• Growth Temperature Reduction for Isoelectronic As-Doped GaN

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