Temperature Dependence of the Band-Edge Transitions of ZnCdBeSe
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概要
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We have characterized the temperature dependence of band-edge transitions of three (Zn0.38Cd0.62)1-xBexSe II–VI films with different Be concentrations $x$ by using contactless electroreflectance (CER) and piezoreflectance (PzR) in the temperature range of 15 to 450 K. By a careful comparison of the relative intensity of PzR and CER spectra, the identification of light-hole (lh) and heavy-hole (hh) character of the excitonic transitions of the samples has been accomplished. The temperature dependence analysis yields information on the parameters that describe the temperature variations of the energy (including thermal expansion effects) and broadening parameter of the band edge transitions of ZnCdBeSe. The study shows that Be incorporation can effectively reduce the rate of temperature variation of the energy gap.
- 2004-02-15
著者
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Tiong Kwong-kau
Department Of Electrical Engineering National Taiwan Ocean University
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Huang Ying-sheng
Department Of Electronic Engineering National Taiwan Institute Of Technology
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HSIEH CHANG-HSUN
Department of Internal Medicine, Tri-Service General Hospital
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Huang Ying-Sheng
Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan, Republic of China
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Tiong Kwong-Kau
Department of Electrical Engineering, National Taiwan Ocean Univesity, Keelung 202, Taiwan, Republic of China
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Maksimov Oleg
Center for Advanced Technology (CAT) on Photonic Materials and Applications, Center for Analysis of Structures and Interfaces (CASI), Department of Chemistry, City College-CUNY, New York, NY 10031, USA
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Ho Ching-Hwa
Department of Materials Science and Engineering, National Dong Hwa University, Shoufeng, Hualien 974, Taiwan, Republic of China
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Muñoz Martin
Center for Advanced Technology (CAT) on Photonic Materials and Applications, Center for Analysis of Structures and Interfaces (CASI), Department of Chemistry, City College-CUNY, New York, NY 10031, USA
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Tamargo Maria
Center for Advanced Technology (CAT) on Photonic Materials and Applications, Center for Analysis of Structures and Interfaces (CASI), Department of Chemistry, City College-CUNY, New York, NY 10031, USA
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Muñoz Martin
Center for Advanced Technology (CAT) on Photonic Materials and Applications, Center for Analysis of Structures and Interfaces (CASI), Department of Chemistry, City College-CUNY, New York, NY 10031, USA
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Hsieh Chang-Hsun
Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan, Republic of China
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