Influence of Sapphire Nitridation on Properties of Indium Nitride Prepared by Metalorganic Vapor Phase Epitaxy

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概要

• 論文の詳細を見る

• Indium nitride films have been successfully grown on (0001) sapphiresubstrates by metalorganic vapor phase epitaxy (MOVPE) using TMIn and NH3as source precursors. Experimental results indicated that pregrowthtreatments, such as buffer layer growth, nitridation temperature andnitridation duration have dramatic effects on the growth of the InN films. For filmsnitridated at 1,000°C for 40 min without any buffer layer growth,we obtained an InN film quality with Hall mobility, carrier concentrationand line width of Raman E2 mode of 270 cm2/V·s, 5 ×1019 cm-3 and 4.5 cm-1, respectively, which is among the bestquality ever reported for such type of film grown by MOVPE.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1999-02-15

著者

• Shu Chen-ke

  Department Of Electrophysics National Chiao Tung University

• Pan Yung-chung

  Department Of Electrophysics National Chiao-tung University

• CHIANG Chung-I

  Chung-Shan Institute of Science and Technology

• CHANG Horng

  Chung-Shan Institute of Science and Technology

• Lin Deng-sung

  Institute Of Physics National Chiao-tung University

• Chen Wei-kuo

  Department Of Electrophysics Chiao-tung University

• Lee Ming-chih

  Department Of Electrophysics National Chiao Tung University

• Lee Wen-hsiung

  Department Of Electrophysics National Chiao-tung University

• LIN Heng-Ching

  Department of Electrophysics, National Chiao Tung University

• Chiang Chung-I

  Chung-Shan Institute of Science and Technology, Tao-Yuane, Taiwan, 325, R.O.C.

• Lin Heng-Ching

  Department of Electrophysics, National Chiao-Tung University,

• Chang Horng

  Chung-Shan Institute of Science and Technology, Tao-Yuane, Taiwan, 325, R.O.C.

• Lin Deng-Sung

  Institute of Physics, National Chiao-Tung University,

関連論文

• Formation of Self-organized GaN Dots on Al_Ga_N by Alternating Supply of Source Precursors
• Luminescence Intensity Reduction in Mg-Doped GaN Grown by Metalorganic Chemical Vapor Phase Epitaxy : Semiconductors
• Raman Scattering of Fe_xRuS_2 Mixed Crystals
• Raman Characterizations of Ruthenium Dichalcogenides
• Influence of Sapphire Nitridation on Properties of Indium Nitride Prepared by Metalorganic Vapor Phase Epitaxy
• Long-Term Photocapacitance Decay Behavior in Undoped GaN : Semiconductors
• Comparative Study of Schottky Diode Characteristics in Ni, Ta and Ni/Ta Metal Contact Schemes on n-GaN : Semiconductors
• A High-Temperature Thermodynamic Model for Metalorganic Vapor Phase Epitaxial Growth of InGaN
• Raman and X-Ray Studies of InN Films Grown at Different Temperatures by Metalorganic Vapor Phase Epitaxy
• An Elucidation of Solid Incorporation of InGaN Grown by Metalorganic Vapor Phase Epitaxy
• Growth and X-ray Characterization of an InN Film on Sapphire Prepared by Metalorganic Vapor Phase Epitaxy
• Crystalline Structure Changes in GaN Films Grown at Different Temperatures
• Properties of Highly Resistive and Nonstoichiometric GaAs Film Grown by Low-temperature Metalorganic Chemical Vapor Deposition Using Tertiarybutylarsine
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• Electrical Properties of the Free-Standing Diamond Film at High Voltages
• Influence of Sapphire Nitridation on Properties of Indium Nitride Prepared by Metalorganic Vapor Phase Epitaxy
• Raman and X-Ray Studies of InN Films Grown at Different Temperatures by Metalorganic Vapor Phase Epitaxy
• CW Laser Heating Effects and Mode Splitting of the Raman Spectra of the (Dy and Y)Ba2Cu3O7-δ Superconductors
• Growth Temperature Reduction for Isoelectronic As-Doped GaN

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