Apparent Topographic Height Variations Measured by Noncontact Atomic Force Microscopy

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概要

• 論文の詳細を見る

• The topographic height measurement on a sample consisting of domains of different materials in noncontact atomic force microscopy (NC-AFM) is typically incorrect owing to the variation in electrostatic force between a tip and a sample. The tip–sample electrostatic force is owing to the difference in effective contact potential between a tip and a sample. This study demonstrates that the error in height strongly depends on the bias applied between the tip and the sample, the radius of the tip apex, the work function difference, and the frequency shift. Experimental results are well explained by integrated model calculations and by including the van der Waals and electrostatic forces between the tip and the sample in the analysis. When the simultaneous compensation of contact potentials during imaging is not performed, the errors occurring in the height measurement can be estimated from the tip–sample distance vs the bias curves obtained in situ.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-07-15

著者

• Lin Deng-sung

  Institute Of Physics National Chiao-tung University

• Lin Deng-Sung

  Institute of Physics, National Chiao-Tung University, 1001 Ta-Hsueh Road, Hsinchu 30010, Taiwan

• Yang Kai-Ming

  Institute of Physics, National Chiao-Tung University, 1001 Ta-Hsueh Road, Hsinchu 30010, Taiwan

• Chung Jen-Yang

  Institute of Physics, National Chiao-Tung University, 1001 Ta-Hsueh Road, Hsinchu 30010, Taiwan

• Hsieh Ming-Feng

  Institute of Physics, National Chiao-Tung University, 1001 Ta-Hsueh Road, Hsinchu 30010, Taiwan

• Yang Kai-Ming

  Institute of Physics, National Chiao-Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan

• Hsieh Ming-Feng

  Institute of Physics, National Chiao-Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan

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• Apparent Topographic Height Variations Measured by Noncontact Atomic Force Microscopy
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• Influence of Sapphire Nitridation on Properties of Indium Nitride Prepared by Metalorganic Vapor Phase Epitaxy

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