Evolution of Two-Dimensional Structure Phase Transitions $(3 \times 1) \rightarrow (2 \times 1)$ and $(1 \times 1)\rightarrow(2 \times 1)$ on Hydrogen-Terminated Si(100) Surface
スポンサーリンク
概要
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On the Si(100) surface, monohydride dimers (H–Si–Si–H or M–M) and dihydride (H–Si–H or D) species can form an ordered mixture with ($3 \times 1$), ($1 \times 1$) and ($2 \times 1$) phases. Thermal annealing at elevated temperatures causes both the ($3 \times 1$) and ($1 \times 1$) domains to transform to the ($2 \times 1$) monohydride phase. We utilize scanning tunneling microscopy to observe these two-dimensional structure phase transitions on the atomic scale. The results show that the coverage of the ($3 \times 1$) and ($1 \times 1$) domains decays linearly with a common half-life time of $\sim$9.8 h at 570 K. In good agreement with a previous report, this finding suggests that the two different transitions are governed by the same reaction mechanism, i.e., the dihydride-pair recombination mechanism.
- 2006-03-15
著者
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Lin Deng-sung
Institute Of Physics National Chiao-tung University
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Yang Kai-Ming
Institute of Physics, National Chiao-Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan
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Hsieh Ming-Feng
Institute of Physics, National Chiao-Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan
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Lin Chang-Ting
Institute of Physics, National Chiao-Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan
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Ferng Shyh-Shin
Institute of Physics, National Chiao-Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan
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Lin Chang-Tin
Institute of Physics, National Chiao-Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan
関連論文
- Influence of Sapphire Nitridation on Properties of Indium Nitride Prepared by Metalorganic Vapor Phase Epitaxy
- Apparent Topographic Height Variations Measured by Noncontact Atomic Force Microscopy
- Evolution of Two-Dimensional Structure Phase Transitions $(3 \times 1) \rightarrow (2 \times 1)$ and $(1 \times 1)\rightarrow(2 \times 1)$ on Hydrogen-Terminated Si(100) Surface
- Influence of Sapphire Nitridation on Properties of Indium Nitride Prepared by Metalorganic Vapor Phase Epitaxy