Low-Temperature Epitaxy of GaAs by Metalorganic Chemical Vapor Deposition

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概要

• 論文の詳細を見る

• The low-temperature (LT) epitaxial growth of high quality GaAs films is achieved by using triethylgallium and tertiarybutylarsine as the precursors. Without any external work, the deposition chart be conducted at a temperature as low as 350℃ in a conventional metalorganic chemical vapor deposition system. The full width at half-maximum of 77 K photoluminescenoe and X-ray rocking curve for a sample grown at 425℃ are 8.2 meV and 14 arcsec, respectively. Materials with good electrical properties were also obtained. A Schottky diode formed on the LT CaAs epilayer shows a barrier height of 0.83 eV, and a reverse saturation current of 1.1×10^<-7> A/cm^2, comparable to that of a normal GaAs Schottky diode.

• 社団法人応用物理学会の論文
• 1994-08-01

著者

• CHEN Wei-Kuo

  Department of Electrophysics, National Chiao Tung University

• CHANG Chen-Shiung

  Institute of Electro-Optical Engineering, National Chiao Tung Universityd

• Chang Chen-shiung

  Institute Of Electro-optical Engineering National Chiao Tung University

• Chang Chen-shiung

  Institute Of Electro-optics Chiao-tung University

• Chen Wei-kuo

  Department Of Electrophysics Chiao-tung University

• CHEN Wen-Chun

  Institute of Electro-optics, Chiao-Tung University

関連論文

• Formation of Self-organized GaN Dots on Al_Ga_N by Alternating Supply of Source Precursors
• Luminescence Intensity Reduction in Mg-Doped GaN Grown by Metalorganic Chemical Vapor Phase Epitaxy : Semiconductors
• Optical Properties of Zn_Cd_xSe Epilayers Grown on (100) GaAs by Molecular Beam Epitaxy
• Influence of Sapphire Nitridation on Properties of Indium Nitride Prepared by Metalorganic Vapor Phase Epitaxy
• Long-Term Photocapacitance Decay Behavior in Undoped GaN : Semiconductors
• Comparative Study of Schottky Diode Characteristics in Ni, Ta and Ni/Ta Metal Contact Schemes on n-GaN : Semiconductors
• A High-Temperature Thermodynamic Model for Metalorganic Vapor Phase Epitaxial Growth of InGaN
• Raman and X-Ray Studies of InN Films Grown at Different Temperatures by Metalorganic Vapor Phase Epitaxy
• An Elucidation of Solid Incorporation of InGaN Grown by Metalorganic Vapor Phase Epitaxy
• Growth and X-ray Characterization of an InN Film on Sapphire Prepared by Metalorganic Vapor Phase Epitaxy
• Crystalline Structure Changes in GaN Films Grown at Different Temperatures
• Synthesis of Bulk β-FeSi_2 Crystal(Structure and Mechanical and Thermal Properties of Condensed Matter)
• Properties of Highly Resistive and Nonstoichiometric GaAs Film Grown by Low-temperature Metalorganic Chemical Vapor Deposition Using Tertiarybutylarsine
• Electrical Properties of the Free-Standing Diamond Film at High Voltages
• Optoelectronic Synchronization of Distributed Microwave Oscillators Using Semiconductor Laser Diodes
• Effects of Thermal Annealing on Ni/Ta/n-GaN Schottky Diodes : Semiconductors
• Growth Temperature Reduction for Isoelectronic As-Doped GaN
• Organometallic Vapor Phase Epitaxial Growth of AlAs_xSb_ Films Using Tertiarybutylarsine
• Deep Level Transient Spectroscopy Depth Profile Measurements of Polycrystalline Zinc Oxide Ceramic
• Fabrication and Optical Property of GaSe Thin Films Grown by Pulsed Laser Deposition
• Effects of Growth Temperature on Solid Incorporation of AlAs_Sb_x Using Tertiarybutylarsine as Arsenic Source Precursor
• Low-Temperature Epitaxy of GaAs by Metalorganic Chemical Vapor Deposition
• Influence of As/Al and Sb/Al Gas Flow Ratios on Growth of AlAs_Sb_x Alloys
• Influence of Thermodynamic Factors on Growth of AlAs_Sb_x Alloys
• Current Properties of GaN V-Defect Using Conductive Atomic Force Microscopy
• Photoluminescence Studies of In-Doped GaN:Mg Films
• Optical Properties of Zn1-xCdxSe Epilayers Grown on (100) GaAs b y Molecular Beam Epitaxy
• Optical Properties of Uncapped InN Nanodots Grown at Various Temperatures
• Photoluminescence Study of GaSe Doped with Er
• Properties of Highly Resistive and Nonstoichiometric GaAs Film Grown by Low-temperature Metalorganic Chemical Vapor Deposition Using Tertiarybutylarsine
• Electrical Properties of the Free-Standing Diamond Film at High Voltages
• Influence of Sapphire Nitridation on Properties of Indium Nitride Prepared by Metalorganic Vapor Phase Epitaxy
• Raman and X-Ray Studies of InN Films Grown at Different Temperatures by Metalorganic Vapor Phase Epitaxy
• Growth Temperature Reduction for Isoelectronic As-Doped GaN

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