Photoluminescence Study of GaSe Doped with Er

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概要

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• The Er-doped GaSe crystal has been investigated by using temperature dependent photoluminescence (TDPL), a Fourier-transform infrared spectrometer (FTIR), and Hall effect measurements. The Er-doped GaSe appears to be a $p$-type semiconductor. The impurity level at ${\sim}2.064$ eV is observed and located at ${\sim}64$ meV above the valence band in both the as-grown and the annealed Er doped GaSe crystal. Additionally, the infrared luminescence and transmission spectra which have arisen from the intracenter transitions 4I9/2 $\rightarrow$ 4I15/2, 4I11/2 $\rightarrow$ 4I15/2, and 4I13/2 $\rightarrow$ 4I15/2 of erbium ions have been observed at ${\sim}0.81$, 0.99, and 1.54 μm, respectively. The annealing process under excess Se atmosphere at 600°C for 72 h can enhance the crystal to have more active erbium ions.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-07-15

著者

• Chang Chen-shiung

  Institute Of Electro-optical Engineering National Chiao Tung University

• Hsu Yu-kuei

  Institute Of Electro-optical Engineering National Chiao Tung University

• Hsieh Wen-feng

  Institute Of Electro-optical Engineering National Chiao Tung University

• Hsieh Wen-Feng

  Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.

• Hsu Yu-Kuei

  Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.

• Chang Chen-Shiung

  Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.

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