Fabrication and Raman Analysis of ZnSe Quantum Dots in Glass Matrix Thin Films by Pulsed Laser Evaporation
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概要
- 論文の詳細を見る
We have successfully fabricated ZnSe-microcrystal-doped silica-glass thin films by pulsed laser evaporation from ZnSe powder embedded in sol-gel glass targets and demonstrated that the spatial correlation model can be used to analyze the LO Raman mode of ZnSe semiconductor doped glass thin films. The obtained correlation lengths differ from the real sizes of the particulates observed by scanning electron microscopy which may be due to the fact that the particulates are polycrystalline, with different orientations separated by grain boundaries, and the correlation length just provides a measure of the separated average grain dimension. The photoluminescence spectrum indicates that the carriers may tunnel through the grain walls in the polycrystalline particulates. Low temperature annealing only causes aggregate of particulates without merging the grain boundaries.
- 社団法人応用物理学会の論文
- 1998-07-15
著者
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Yin Sun-bin
Institute Of Electro-optical Engineering National Chiao Tung University
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CHEN Lisa
Institute of Electro-Optical Engineering, National Chiao Tung University
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HSIEH Wen-Feng
Institute of Electro-Optical Engineering, National Chiao Tung University
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Hsieh Wen-feng
Institute Of Electro-optical Engineering National Chiao Tung University
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Chen Lisa
Institute Of Electro-optical Engineering National Chiao Tung University
関連論文
- Fabrication and Raman Analysis of ZnSe Quantum Dots in Glass Matrix Thin Films by Pulsed Laser Evaporation
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- Fabrication and Characterization of CdS Nanostructure Doped Glass Thin Films by Pulsed Laser Evaporation
- Saturation of Large Nonresonant Third and Fifth Order Optical Nonlinearities from ZnSe Quantum Dots in Glass-Matrix Thin Films
- Photoluminescence Study of GaSe Doped with Er
- Fabrication and Characterization of CdS Nanostructure Doped Glass Thin Films by Pulsed Laser Evaporation