Optoelectronic Synchronization of Distributed Microwave Oscillators Using Semiconductor Laser Diodes

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1992-09-01

著者

• Pan C‐l

  National Chiao Tung Univ. Hsinchu Twn

• Pan Ci-ling

  Institute Of Electro-optical Engineering National Chiao Tung University

• Pan Ci-ling

  Institute Of Electro-optic Engineering National Chiao Tung University

• WU Hsiao-Hua

  Institute of Electro-Optical Engineering, National Chiao-Tung University

• Wu Hsiao-hua

  Institute Of Electro-optical Engineering National Chiao Tung University

• CHANG Chen-Shiung

  Institute of Electro-Optical Engineering, National Chiao Tung Universityd

• Chang Chen-shiung

  Institute Of Electro-optical Engineering National Chiao Tung University

関連論文

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• Near-Infrared Transmission Measurement of EL2 Concentration in Semi-Insulating GaAs Wafers with a Laser Diode (λ=1.3μm)
• Optical Nonlinearity and Ultrafast-Carrier Dynamics of a Strained Quantum-Well Saturable Bragg Reflector
• Generation of THz Radiation from Resonant Absorption in Strained Multiple Quantum Wells in a Magnetic Field : Optics and Quantum Electronics
• Efficient Terahertz Radiation Generation from a Bulk InAs Mirror as an Intracavity Terahertz Radiation Emitter
• THz Radiation from Intracavity Saturable Bragg Reflector in Magnetic Field with Self-Started Mode-Locking by Strained Saturable Bragg Reflector
• High Average Power Mode Locked Ti:Sapphire Laser with Intracavity Continuous-Wave Amplifier and Strained Saturable Bragg Reflector
• Transverse Mode with Y-Junction Structures in Broad-Area Oxide-Confined Vertica-Cavity Surface-Emitting aser
• Effect of Thermal Annealing on Band Edge Absorption Spectrum of Arsenic-Ion-Implanted GaAs : Semiconductors
• Synthesis of Bulk β-FeSi_2 Crystal(Structure and Mechanical and Thermal Properties of Condensed Matter)
• Formation of Transverse Modes with Y-Junction Structures in Broad-Area Oxide-Confined Vertical-Cavity Surface-Emitting Laser
• Correlation between Defect Concentration and Carrier Lifetime of GaAs Grown by Molecular Beam Epitaxy at Different Temperatures : Semiconductors
• Comments on "A Simple Method for Single-Frequency Operation and Amplitude- and Frequency-Stabilization of an Internal-Mirror He-Ne Laser"
• An All-Fiber Frequency Stabilizer to a Set of Laser Diodes Based on Double Fiber Resonators
• Improved Performance of an Internal-Mirror He-Ne Laser (λ=633 nm) Stabilized by the Total Power Method
• Tunable Picosecond Pulse Generation from an Actively Mode-Locked Laser Diode Array with Intracavity Chirp Compensation
• Optoelectronic Synchronization of Distributed Microwave Oscillators Using Semiconductor Laser Diodes
• A Novel Optoelectronic Phase-Locked Loop Based on a Square-Wave Phase-Modulated Static Fiber-Optic Gyroscope
• Fabrication and Optical Property of GaSe Thin Films Grown by Pulsed Laser Deposition
• Low-Temperature Epitaxy of GaAs by Metalorganic Chemical Vapor Deposition
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• Photoluminescence Study of GaSe Doped with Er
• Transverse Mode with Y-Junction Structures in Broad-Area Oxide-Confined Vertical-Cavity Surface-Emitting Laser
• Frequency Resolved Optical Gating Studies of Strained Saturable Bragg Reflector: Anomalous Dispersion near Resonance Absorption of the Exciton Resonance

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