Effect of Thermal Annealing on Band Edge Absorption Spectrum of Arsenic-Ion-Implanted GaAs : Semiconductors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-11-15
著者
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Lin Gong-ru
Graduate Institute Of Opto-electronic Technology National Taipei University Of Technology
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Pan Ci-ling
Institute Of Electro-optical Engineering National Chiao Tung University
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Pan Ci-ling
Institute Of Electro-optic Engineering National Chiao Tung University
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