Comments on "A Simple Method for Single-Frequency Operation and Amplitude- and Frequency-Stabilization of an Internal-Mirror He-Ne Laser"

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1985-07-20

著者

• Pan Ci-ling

  Institute Of Electro-optical Engineering National Chiao Tung University

• Pan Ci-ling

  Institute Of Electro-optic Engineering National Chiao Tung University

• Pan Ci-ling

  Institute Of Electro-optical Engineering

• KUO C.-C.

  Institute of Electro-Optical Engineering

• HSIEH T.-C.

  Institute of Electro-Optical Engineering

• LENT T.-F.

  Department of Electronic Enginnering, National Chiao Tung University

• Lent T.-f.

  Department Of Electronic Enginnering National Chiao Tung University

関連論文

• Simultaneous Observation of Second-Harmonic Emission and Three-Photon Excited Photoluminescence from Hybrid Vapor Phase Epitaxy-Grown GaN Film : Semiconductors
• Near-Infrared Transmission Measurement of EL2 Concentration in Semi-Insulating GaAs Wafers with a Laser Diode (λ=1.3μm)
• Optical Nonlinearity and Ultrafast-Carrier Dynamics of a Strained Quantum-Well Saturable Bragg Reflector
• Generation of THz Radiation from Resonant Absorption in Strained Multiple Quantum Wells in a Magnetic Field : Optics and Quantum Electronics
• Efficient Terahertz Radiation Generation from a Bulk InAs Mirror as an Intracavity Terahertz Radiation Emitter
• THz Radiation from Intracavity Saturable Bragg Reflector in Magnetic Field with Self-Started Mode-Locking by Strained Saturable Bragg Reflector
• High Average Power Mode Locked Ti:Sapphire Laser with Intracavity Continuous-Wave Amplifier and Strained Saturable Bragg Reflector
• Transverse Mode with Y-Junction Structures in Broad-Area Oxide-Confined Vertica-Cavity Surface-Emitting aser
• Effect of Thermal Annealing on Band Edge Absorption Spectrum of Arsenic-Ion-Implanted GaAs : Semiconductors
• Formation of Transverse Modes with Y-Junction Structures in Broad-Area Oxide-Confined Vertical-Cavity Surface-Emitting Laser
• Correlation between Defect Concentration and Carrier Lifetime of GaAs Grown by Molecular Beam Epitaxy at Different Temperatures : Semiconductors
• Comments on "A Simple Method for Single-Frequency Operation and Amplitude- and Frequency-Stabilization of an Internal-Mirror He-Ne Laser"
• An All-Fiber Frequency Stabilizer to a Set of Laser Diodes Based on Double Fiber Resonators
• Improved Performance of an Internal-Mirror He-Ne Laser (λ=633 nm) Stabilized by the Total Power Method
• Tunable Picosecond Pulse Generation from an Actively Mode-Locked Laser Diode Array with Intracavity Chirp Compensation
• Optoelectronic Synchronization of Distributed Microwave Oscillators Using Semiconductor Laser Diodes
• A Novel Optoelectronic Phase-Locked Loop Based on a Square-Wave Phase-Modulated Static Fiber-Optic Gyroscope
• Optical Nonlinearity and Ultrafast-Carrier Dynamics of a Strained Quantum-Well Saturable Bragg Reflector
• Transverse Mode with Y-Junction Structures in Broad-Area Oxide-Confined Vertical-Cavity Surface-Emitting Laser
• Frequency Resolved Optical Gating Studies of Strained Saturable Bragg Reflector: Anomalous Dispersion near Resonance Absorption of the Exciton Resonance

もっと見る 閉じる

スポンサーリンク