Deep Level Transient Spectroscopy Depth Profile Measurements of Polycrystalline Zinc Oxide Ceramic

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1996-09-15

著者

• CHEN Wei-Kuo

  Department of Electrophysics, National Chiao Tung University

• LEE Wei-I

  Department of Electrophysics, and Microelectronics and Information Systems Research Center, National

• Lee Wei-i

  Department Of Electrophysics And Microelectronics And Information Systems Research Center National C

• Lee Wei-i

  Department Of Electrophysics Microelectronics And Information Systems Research Center National Chiao

• Chen Wei-kuo

  Department Of Electrophysics Microelectronics And Information Systems Research Center National Chiao

• Chen Wei-kuo

  Department Of Electrophysics Chiao-tung University

• YOUNG Ruey-Ling

  Department of Electrophysics, Microelectronics and Information Systems Research Center, National Chi

• Young Ruey-ling

  Department Of Electrophysics Microelectronics And Information Systems Research Center National Chiao

関連論文

• Formation of Self-organized GaN Dots on Al_Ga_N by Alternating Supply of Source Precursors
• Luminescence Intensity Reduction in Mg-Doped GaN Grown by Metalorganic Chemical Vapor Phase Epitaxy : Semiconductors
• Optical Properties of Zn_Cd_xSe Epilayers Grown on (100) GaAs by Molecular Beam Epitaxy
• Influence of Sapphire Nitridation on Properties of Indium Nitride Prepared by Metalorganic Vapor Phase Epitaxy
• Long-Term Photocapacitance Decay Behavior in Undoped GaN : Semiconductors
• Comparative Study of Schottky Diode Characteristics in Ni, Ta and Ni/Ta Metal Contact Schemes on n-GaN : Semiconductors
• A High-Temperature Thermodynamic Model for Metalorganic Vapor Phase Epitaxial Growth of InGaN
• Raman and X-Ray Studies of InN Films Grown at Different Temperatures by Metalorganic Vapor Phase Epitaxy
• An Elucidation of Solid Incorporation of InGaN Grown by Metalorganic Vapor Phase Epitaxy
• Growth and X-ray Characterization of an InN Film on Sapphire Prepared by Metalorganic Vapor Phase Epitaxy
• Crystalline Structure Changes in GaN Films Grown at Different Temperatures
• Properties of Highly Resistive and Nonstoichiometric GaAs Film Grown by Low-temperature Metalorganic Chemical Vapor Deposition Using Tertiarybutylarsine
• Electrical Properties of the Free-Standing Diamond Film at High Voltages
• Nonlithographic Random Masking and Regrowth of GaN Microhillocks to Improve Light-Emitting Diode Efficiency
• A Dopant-Related Defect in Te-Doped AlInP
• Effects of Thermal Annealing on Ni/Ta/n-GaN Schottky Diodes : Semiconductors
• Growth Temperature Reduction for Isoelectronic As-Doped GaN
• Organometallic Vapor Phase Epitaxial Growth of AlAs_xSb_ Films Using Tertiarybutylarsine
• Analysis of Influence of Alkyl Sources on Deep Levels in GaN by Transient Capacitance Method
• Deep Level Transient Spectroscopy Depth Profile Measurements of Polycrystalline Zinc Oxide Ceramic
• Influence of Barrier Growth Temperature on the Properties of InGaN/GaN Quantum Well : Semiconductors
• Ga_In_P Barrier Layer for Wet Oxidation of AIAs
• Thermal Stability of Plasma-Treated Ohmic Contacts to n-GaN
• Effects of Growth Temperature on Solid Incorporation of AlAs_Sb_x Using Tertiarybutylarsine as Arsenic Source Precursor
• Low-Temperature Epitaxy of GaAs by Metalorganic Chemical Vapor Deposition
• Influence of As/Al and Sb/Al Gas Flow Ratios on Growth of AlAs_Sb_x Alloys
• Influence of Thermodynamic Factors on Growth of AlAs_Sb_x Alloys
• Stress and Defect Distribution of Thick GaN Film Homoepitaxially Regrown on Free-Standing GaN by Hydride Vapor Phase Epitaxy
• Current Properties of GaN V-Defect Using Conductive Atomic Force Microscopy
• Photoluminescence Studies of In-Doped GaN:Mg Films
• A Novel Technique for Growing Crack-Free GaN Thick Film by Hydride Vapor Phase Epitaxy
• Nonlithographic Random Masking and Regrowth of GaN Microhillocks to Improve Light-Emitting Diode Efficiency
• Thermal Stability of Plasma-Treated Ohmic Contacts to n-GaN
• Thickness Dependence of Current Conduction and Carrier Distribution of GaAsN Grown on GaAs
• Optical Properties of Zn1-xCdxSe Epilayers Grown on (100) GaAs b y Molecular Beam Epitaxy
• Optical Properties of Uncapped InN Nanodots Grown at Various Temperatures
• Properties of Highly Resistive and Nonstoichiometric GaAs Film Grown by Low-temperature Metalorganic Chemical Vapor Deposition Using Tertiarybutylarsine
• A Simple Growth Method to Produce a-Plane GaN Thick Films by Hydride Vapor Phase Epitaxy
• Using Planarized p-GaN Layer to Reduce Electrostatic Discharged Damage in Nitride-Based Light-Emitting Diode
• Electrical Properties of the Free-Standing Diamond Film at High Voltages
• Influence of Sapphire Nitridation on Properties of Indium Nitride Prepared by Metalorganic Vapor Phase Epitaxy
• Raman and X-Ray Studies of InN Films Grown at Different Temperatures by Metalorganic Vapor Phase Epitaxy
• A Simple Growth Method to Produce a-Plane GaN Thick Films by Hydride Vapor Phase Epitaxy
• Growth Temperature Reduction for Isoelectronic As-Doped GaN

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