A Novel Technique for Growing Crack-Free GaN Thick Film by Hydride Vapor Phase Epitaxy

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概要

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• To prevent the cracking of GaN thick films grown on a sapphire substrate by hydride vapor phase epitaxy (HVPE), a novel technique without complex processes is developed. By adding a temperature ramping step in the HVPE GaN epitaxy process, more than 300-μm-thick high-quality crack-free GaN thick films on sapphire substrate can be obtained by this technique. After separation by a conventional laser-induced lift-off process, a 1.5 in. 300 μm freestanding GaN wafer with a dislocation density of approximately $1 \times 10^{7}$ cm-2 could be fabricated without any cracks. No additional designed-patterned or stress-reduced structures were applied in these samples to reduce the dislocation density and thermal stress.

• 2008-11-25

著者

• Lee Wei-i

  Department Of Electrophysics And Microelectronics And Information Systems Research Center National C

• Huang Hsin-hsiung

  Department Of Electronic Engineering Lunghwa University Of Science And Technology

• Yu Hung-Wei

  Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan, R.O.C.

• Chu Ting-Li

  Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan, R.O.C.

• Chen Kuei-Ming

  Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan

• Chiang Chen-Hao

  Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan

• Tu Li-Wei

  Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, R.O.C.

• Wu Pei-Lun

  Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan, R.O.C.

• Lee Wei-I

  Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan, R.O.C.

• Huang Hsin-Hsiung

  Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan, R.O.C.

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