Using Planarized p-GaN Layer to Reduce Electrostatic Discharged Damage in Nitride-Based Light-Emitting Diode

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概要

• 論文の詳細を見る

• Electrostatic discharge damage is a serious problem on nitride-based light-emitting diodes (LEDs), due to their large lattice mismatch between III–nitride material and the sapphire substrate, which induces high-density threading dislocations. In this study, GaN/GaInN-based LEDs with various thicknesses of the low-temperature planarized p-GaN layer were fabricated. We found that when the V-shaped defects were filled by the planarized p-GaN layer, the survival rate of LEDs under human-body mode $-4000$ V stress increases from 23 to 93% and the survival rate under machine mode $-600$ V stress increases from 20 to 67%. Thus the ability to endure higher electrostatic discharge stress will be greatly improved.

• Japan Society of Applied Physicsの論文
• 2007-05-25

著者

• LEE Chi-Ling

  Department of Electrophysics, and Microelectronics and Information Systems Research Center, National

• Lee Wei-i

  Department Of Electrophysics And Microelectronics And Information Systems Research Center National C

• Lee Chi-Ling

  Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan, R.O.C.

• Lee Wei-I

  Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan, R.O.C.

関連論文

• Nonlithographic Random Masking and Regrowth of GaN Microhillocks to Improve Light-Emitting Diode Efficiency
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• Deep Level Transient Spectroscopy Depth Profile Measurements of Polycrystalline Zinc Oxide Ceramic
• Influence of Barrier Growth Temperature on the Properties of InGaN/GaN Quantum Well : Semiconductors
• Ga_In_P Barrier Layer for Wet Oxidation of AIAs
• Stress and Defect Distribution of Thick GaN Film Homoepitaxially Regrown on Free-Standing GaN by Hydride Vapor Phase Epitaxy
• A Novel Technique for Growing Crack-Free GaN Thick Film by Hydride Vapor Phase Epitaxy
• Nonlithographic Random Masking and Regrowth of GaN Microhillocks to Improve Light-Emitting Diode Efficiency
• Thermal Stability of Plasma-Treated Ohmic Contacts to n-GaN
• Thickness Dependence of Current Conduction and Carrier Distribution of GaAsN Grown on GaAs
• A Simple Growth Method to Produce a-Plane GaN Thick Films by Hydride Vapor Phase Epitaxy
• Using Planarized p-GaN Layer to Reduce Electrostatic Discharged Damage in Nitride-Based Light-Emitting Diode
• A Simple Growth Method to Produce a-Plane GaN Thick Films by Hydride Vapor Phase Epitaxy

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