A Dopant-Related Defect in Te-Doped AlInP
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-08-15
著者
-
Lee S‐c
National Taiwan Univ. Taipei Twn
-
Lee W‐i
National Chiao Tung Univ. Hsinchu Twn
-
Lee Wei-i
Microelectronics And Information Systems Research Center National Chiao Tung University
-
Wen Tzu-chi
Department Of Electrophysics National Chiao Tung University
-
SUNG Wei-Jer
Department of Electrophysics, National Chiao Tung University
-
WU Yu-Rue
Epistar Corporation
-
Lee Shih-chang
Department Of Electrophysics National Chiao Tung University
-
Wu Y‐r
Epistar Corp. Hsinchu Twn
-
Sung W‐j
Department Of Electrophysics National Chiao Tung University
-
LEE Wei-I
Department of Electrophysics, and Microelectronics and Information Systems Research Center, National
-
Lee Wei-i
Department Of Electrophysics And Microelectronics And Information Systems Research Center National C
-
WU Yu-Rue
Department of Electrophysics, Microelectronics and Information Systems Research Center, National Chi
-
Sung Wei-jer
Department Of Electrophysics National Chiao Tung University
-
Wen Tzu-chi
Department Of Electrophysics And Microelectronics And Information Systems Research Center National C
-
Lee Shih-chang
Department Of Electrophysics National Chiao Tang University
関連論文
- Deep Hole Teaps Created by Gamma-Ray lrradiation of GaInP : Semiconductors
- Gamma-Ray Induced Deep Electron Traps in GalnP : Semiconductors
- Deep Electron Trapping Centers in Te-doped (Al_x Ga_)_ In_ P (x=0.5) Layers Grown by Metal-Organic Chemical Vapor Deposition(Semiconductors)
- Thermal-Treatment Induced Deep Electron Traps In AlInP : Semiconductors
- Angle Position Detection Based on Amorphous Silicon Four Quadrant Orientation Detector
- Nonlithographic Random Masking and Regrowth of GaN Microhillocks to Improve Light-Emitting Diode Efficiency
- Phosphorus Vacancy as a Deep Level in AlInP Layers
- A Dopant-Related Defect in Te-Doped AlInP
- Mg-related Deep Levels in AlInP
- Device Performance Improvement Based on Transient Enhanced Diffusion Suppression in the Deep Sub-Quarter Micron Scale
- Device Performances Improvement Based on TED Suppression in Deep Sub-Quarter Micron Regime
- Activation of p-Type GaN in a Pure Oxygen Ambient : Semiconductors
- Study the Al-oxide/GaAs Interface Characteristics by Spectral Response of GaAs Solar Cells (Proceedings of the 12th International Conference on Ternary and Multinary Compounds ICTMC-12)
- Organometallic Vapor Phase Epitaxial Growth of AlAs_xSb_ Films Using Tertiarybutylarsine
- Analysis of Influence of Alkyl Sources on Deep Levels in GaN by Transient Capacitance Method
- Deep Level Transient Spectroscopy Depth Profile Measurements of Polycrystalline Zinc Oxide Ceramic
- Influence of Barrier Growth Temperature on the Properties of InGaN/GaN Quantum Well : Semiconductors
- Ga_In_P Barrier Layer for Wet Oxidation of AIAs
- Thermal Stability of Plasma-Treated Ohmic Contacts to n-GaN
- Stress and Defect Distribution of Thick GaN Film Homoepitaxially Regrown on Free-Standing GaN by Hydride Vapor Phase Epitaxy
- A Novel Technique for Growing Crack-Free GaN Thick Film by Hydride Vapor Phase Epitaxy
- Nonlithographic Random Masking and Regrowth of GaN Microhillocks to Improve Light-Emitting Diode Efficiency
- Thermal Stability of Plasma-Treated Ohmic Contacts to n-GaN
- Thickness Dependence of Current Conduction and Carrier Distribution of GaAsN Grown on GaAs
- A Simple Growth Method to Produce a-Plane GaN Thick Films by Hydride Vapor Phase Epitaxy
- Using Planarized p-GaN Layer to Reduce Electrostatic Discharged Damage in Nitride-Based Light-Emitting Diode
- A Simple Growth Method to Produce a-Plane GaN Thick Films by Hydride Vapor Phase Epitaxy
- Gamma-Ray Induced Deep Electron Traps in GaInP