Wen Tzu-chi | Department Of Electrophysics National Chiao Tung University
スポンサーリンク
概要
関連著者
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Wen Tzu-chi
Department Of Electrophysics National Chiao Tung University
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Lee S‐c
National Taiwan Univ. Taipei Twn
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Lee W‐i
National Chiao Tung Univ. Hsinchu Twn
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Lee Wei-i
Microelectronics And Information Systems Research Center National Chiao Tung University
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Lee Shih-chang
Department Of Electrophysics National Chiao Tung University
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Wen Tzu-chi
Department Of Electrophysics And Microelectronics And Information Systems Research Center National C
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Lee Shih-chang
Department Of Electrophysics National Chiao Tang University
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SUNG Wei-Jer
Department of Electrophysics, National Chiao Tung University
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WU Yu-Rue
Epistar Corporation
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Wu Y‐r
Epistar Corp. Hsinchu Twn
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Sung W‐j
Department Of Electrophysics National Chiao Tung University
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LEE Wei-I
Department of Electrophysics, and Microelectronics and Information Systems Research Center, National
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Lee Wei-i
Department Of Electrophysics And Microelectronics And Information Systems Research Center National C
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WU Yu-Rue
Department of Electrophysics, Microelectronics and Information Systems Research Center, National Chi
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Sung Wei-jer
Department Of Electrophysics National Chiao Tung University
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CHEN Tsung-yu
Advanced Epitaxy Technology Inc.
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TSANG Jian-Shihn
Advanced Epitaxy Technology Inc.
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Chan Shin-hsiung
Advanced Epitaxy Technology Inc.
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LI Tsang-Jou
Department of Electrophysics, Microelectronics and Information Systems Research Center, National Chi
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CHANG Jung-Ting
Advanced Epitaxy Technology Incorporation
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LEE Wei-I.
Department of Electrophysics, Microelectronics and Information Systems Research Center, National Chi
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Li Tsang-jou
Department Of Electrophysics Microelectronics And Information Systems Research Center National Chiao
著作論文
- Phosphorus Vacancy as a Deep Level in AlInP Layers
- A Dopant-Related Defect in Te-Doped AlInP
- Activation of p-Type GaN in a Pure Oxygen Ambient : Semiconductors
- Study the Al-oxide/GaAs Interface Characteristics by Spectral Response of GaAs Solar Cells (Proceedings of the 12th International Conference on Ternary and Multinary Compounds ICTMC-12)
- Influence of Barrier Growth Temperature on the Properties of InGaN/GaN Quantum Well : Semiconductors