CHEN Tsung-yu | Advanced Epitaxy Technology Inc.
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概要
関連著者
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CHEN Tsung-yu
Advanced Epitaxy Technology Inc.
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TSANG Jian-Shihn
Advanced Epitaxy Technology Inc.
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Sze S‐m
National Nano Device Lab. Hsinchu Twn
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GUO Jan-Dar
National Nano Device Laboratories
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Chan S‐h
Advanced Epitaxy Technol. Inc. Hsinchu Twn
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Lee S‐c
National Taiwan Univ. Taipei Twn
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Lai W‐c
National Cheng Kung Univ.
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Yokoyama Meiso
Department of Electrical Engineering, National Cheng Kung University
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Lee W‐i
National Chiao Tung Univ. Hsinchu Twn
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Chan Shih-hsiung
Department Of Electrical Engineering National Cheng Kung University
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CHANG Shoou-Jinn
Department of Electrical Engineering, National Cheng Kung University
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SZE Simon
National Nano Device Laboratory
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Sze S
National Chiao‐tung Univ. Hsinchu Twn
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Lee Wei-i
Microelectronics And Information Systems Research Center National Chiao Tung University
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Wen Tzu-chi
Department Of Electrophysics National Chiao Tung University
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Sze Simon
Department Of Electronics Engineering And Institute Of Electronics National Chiao-tung University:na
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Sze Simon-m.
National Nano Device Laboratory
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Sze Simon
National Nano Device Laboratories
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Tsai Wen-chung
Advanced Epitaxy Technology Inc.
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Lee Shih-chang
Department Of Electrophysics National Chiao Tung University
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Guo J‐d
National Nano Device Laboratory
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LAI Wei-Chih
Department of Electrical Engineering, National Cheng Kung University
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SHEU Chia-hon
Advanced Epitaxy Technology
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CHAN Shih-Hsiung
Advanced Epitaxy Technology Inc.
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Chan Shin-hsiung
Advanced Epitaxy Technology Inc.
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Chen T‐y
Advanced Epitaxy Technol. Inc. Hsinchu Twn
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Yokoyama M
Kawasaki Heavy Ind. Ltd. Chiba Jpn
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Yokoyama Meiso
Department Of Electrical Engineering National Cheng Kung University
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Tsang J‐s
Advanced Epitaxy Technol. Inc. Hsinchu Twn
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Chang Shoou-jinn
Department Of Electrical Engineering National Cheng Kung University
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Wen Tzu-chi
Department Of Electrophysics And Microelectronics And Information Systems Research Center National C
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Lee Shih-chang
Department Of Electrophysics National Chiao Tang University
著作論文
- Optical and Electrical Characteristics of CO_2-Laser-Treated Mg-Doped GaN Film
- Activation of p-Type GaN in a Pure Oxygen Ambient : Semiconductors