Study the Al-oxide/GaAs Interface Characteristics by Spectral Response of GaAs Solar Cells (Proceedings of the 12th International Conference on Ternary and Multinary Compounds ICTMC-12)

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文

著者

• Lee S‐c

  National Taiwan Univ. Taipei Twn

• Lee W‐i

  National Chiao Tung Univ. Hsinchu Twn

• Lee Wei-i

  Microelectronics And Information Systems Research Center National Chiao Tung University

• Wen Tzu-chi

  Department Of Electrophysics National Chiao Tung University

• Lee Shih-chang

  Department Of Electrophysics National Chiao Tung University

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• Device Performances Improvement Based on TED Suppression in Deep Sub-Quarter Micron Regime
• Activation of p-Type GaN in a Pure Oxygen Ambient : Semiconductors
• Study the Al-oxide/GaAs Interface Characteristics by Spectral Response of GaAs Solar Cells (Proceedings of the 12th International Conference on Ternary and Multinary Compounds ICTMC-12)
• Influence of Barrier Growth Temperature on the Properties of InGaN/GaN Quantum Well : Semiconductors
• Ga_In_P Barrier Layer for Wet Oxidation of AIAs

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