Mg-related Deep Levels in AlInP
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-07-15
著者
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Lee S‐c
National Taiwan Univ. Taipei Twn
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Lee W‐i
National Chiao Tung Univ. Hsinchu Twn
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Lee Wei-i
Microelectronics And Information Systems Research Center National Chiao Tung University
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SUNG Wei-Jer
Department of Electrophysics, National Chiao Tung University
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WU Yu-Rue
Epistar Corporation
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Lee Shih-chang
Department Of Electrophysics National Chiao Tung University
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Wu Y‐r
Epistar Corp. Hsinchu Twn
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Sung W‐j
Department Of Electrophysics National Chiao Tung University
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WU Yu-Rue
Department of Electrophysics, Microelectronics and Information Systems Research Center, National Chi
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LI Tsang-Jou
Department of Electrophysics, Microelectronics and Information Systems Research Center, National Chi
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LEE Wei-I.
Department of Electrophysics, Microelectronics and Information Systems Research Center, National Chi
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Li Tsang-jou
Department Of Electrophysics Microelectronics And Information Systems Research Center National Chiao
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Sung Wei-jer
Department Of Electrophysics National Chiao Tung University
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Lee Shih-chang
Department Of Electrophysics National Chiao Tang University
関連論文
- Deep Hole Teaps Created by Gamma-Ray lrradiation of GaInP : Semiconductors
- Gamma-Ray Induced Deep Electron Traps in GalnP : Semiconductors
- Deep Electron Trapping Centers in Te-doped (Al_x Ga_)_ In_ P (x=0.5) Layers Grown by Metal-Organic Chemical Vapor Deposition(Semiconductors)
- Thermal-Treatment Induced Deep Electron Traps In AlInP : Semiconductors
- Angle Position Detection Based on Amorphous Silicon Four Quadrant Orientation Detector
- Nonlithographic Random Masking and Regrowth of GaN Microhillocks to Improve Light-Emitting Diode Efficiency
- Phosphorus Vacancy as a Deep Level in AlInP Layers
- A Dopant-Related Defect in Te-Doped AlInP
- Mg-related Deep Levels in AlInP
- Device Performance Improvement Based on Transient Enhanced Diffusion Suppression in the Deep Sub-Quarter Micron Scale
- Device Performances Improvement Based on TED Suppression in Deep Sub-Quarter Micron Regime
- Activation of p-Type GaN in a Pure Oxygen Ambient : Semiconductors
- Study the Al-oxide/GaAs Interface Characteristics by Spectral Response of GaAs Solar Cells (Proceedings of the 12th International Conference on Ternary and Multinary Compounds ICTMC-12)
- Ga_In_P Barrier Layer for Wet Oxidation of AIAs
- Nonlithographic Random Masking and Regrowth of GaN Microhillocks to Improve Light-Emitting Diode Efficiency
- Thickness Dependence of Current Conduction and Carrier Distribution of GaAsN Grown on GaAs
- Gamma-Ray Induced Deep Electron Traps in GaInP