Thickness Dependence of Current Conduction and Carrier Distribution of GaAsN Grown on GaAs
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概要
- 論文の詳細を見る
Thickness dependence of the properties of GaAsN grown on GaAs was investigated by characterizing GaAs/GaAs0.982N0.018/GaAs Schottky diodes by current–voltage ($I$–$V$), capacitance–voltage ($C$–$V$) profiling and deep-level transient spectroscopy (DLTS). $I$–$V$ characteristics show a considerable increase in the saturation current when the GaAsN thickness is increased from 60 to 250 Å. As GaAsN thickness is increased further, the $I$–$V$ characteristic deviates from that of a normal Schottky diode with a large series resistance. These $I$–$V$ characteristics correlate well with carrier distribution. In thick GaAsN samples, $C$–$V$ profiling shows carrier depletion in the top GaAs layer and frequency-dispersion accumulation in the GaAsN layer. DLTS spectra show that the carrier depletion in the top GaAs layer is due to an EL2 trap and the frequency-dispersion accumulation is due to the removal of electrons from a trap at 0.35 eV in the GaAsN layer. Increasing the GaAsN thickness markedly increases the magnitude of both traps. The large series resistance in thick GaAsN samples is due to EL2 that markedly depletes the top GaAs layer.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-10-15
著者
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Chen Jenn-fang
Department Of Electrophysics National Chiao Tung University
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LEE Chi-Ling
Department of Electrophysics, and Microelectronics and Information Systems Research Center, National
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Lee Wei-i
Department Of Electrophysics And Microelectronics And Information Systems Research Center National C
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Hsiao Ru-shang
Department Of Electrophysics National Chiao Tung University
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Lee Shih-chang
Department Of Electrophysics National Chiao Tang University
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Guo P.
Department Of Civil Engineering Mcmaster University
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Hsiao Ru-Shang
Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
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Hsieh Ming-Ta
Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
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Huang Wen-Di
Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
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Hsieh Ming-Ta
Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan 30050, Republic of China
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Chen Jenn-Fang
Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
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Lee Chi-Ling
Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
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Lee Wei-I
Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
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Guo P.
Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
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