Electrical Properties of Undoped and SnTe-Doped Ga_xIn_<1-x>Sb Molecular-Beam-Epitaxially Growm on GaAs
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概要
- 論文の詳細を見る
Electrical properties of undoped and SnTe-doped Ga_xIn_<1-x>Sb on GaAs grown by molecular beam epitaxy are studied. In the studied composition x from 0.65 to 1, source SnTe is found to be an n-type dopant. The SnTe incorporation efficiency in Ga_xIn_<1-x>Sb is found to have no significant difference from SnTe in GaSb. The fitted ionized impurity concentrations for GaSb increases proportionally with the sample's donor concentrations, suggesting that the charged impurities are introduced through SnTe doping. On the other hand, for Ga_xIn_<1-x>Sb, the fitted ionized impurity concentrations do not vary with the total donor concentration. This suggests that material in-homogeneities or imperfections in Ga_xIn_<1-x>Sb may be the cause of mobility values which are lower than expected. In addition, the V/III beam equivalent pressure (BEP) ratio is found to critically influence the quality of the SnTe-doped ternary layers.
- 社団法人応用物理学会の論文
- 1995-01-15
著者
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Chen J‐f
National Chiao Tung Univ. Hsinchu Twn
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Chen Jenn-fang
Department Of Electrophysics National Chiao Tung University
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Cho Alfred
At&t Bell Laboratories
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JAW Shuenn-Haw
Department of Electrophysics, National Chaio Tung University
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CHO Alfred
AT&T Bell Laboratories
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Jaw Shuenn-haw
Department Of Electrophysics National Chaio Tung University
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