Deep Levels in SnTe-Doped GaSb Grown on GaAs by Molecular Beam Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-07-01
著者
-
Chen Jenn-fang
Department Of Electrophysics National Chiao Tung University
-
CHEN Nie-Chuan
Department of Electrophysics, National Chiao-Tung University
-
Chen Nie-chuan
Department Of Electrophysics National Chiao Tung University
-
LIU Hung-Sing
Department of Electrophysics, National Chiao Tung University
-
Liu Hung-sing
Department Of Electrophysics National Chiao Tung University
-
Chen Nie-Chuan
Department of Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan, Republic of China
関連論文
- Long-Term Photocapacitance Decay Behavior in Undoped GaN : Semiconductors
- Evolution of Carrier Distribution and Defects in InGaAsN/GaAs Quantum Wells with Composition Fluctuation
- Single Mode 1.3μm InGaAsN/GaAs Quantum Well Vertical Cavity Surface Emitting Lasers Grown by Molecular Beam Epitaxy
- Properties of Defect Traps in Triple-Stack InAs/GaAs Quantum Dots and Effect of Annealing
- Voltage and Frequency Dependence of Differential Capacitance in Relaxed In_Ga_As/GaAs Schottky Diodes
- Admittance Spectroscopy and Thermal Stimulation Current for Band-Offset Characteristics in AlAs/GaAs n^+-p Structures
- Capacitance Dispersion in n-LT-i-p GaAs Structures with the Low-Temperature Layers Grown at Different Temperatures
- Analysis of Influence of Alkyl Sources on Deep Levels in GaN by Transient Capacitance Method
- Observation of a Dominant EL2-like Mid-Gap Trap in In_Ga_As/GaAs Suuperlattice Grown at Low Temperature by Molecular Beam Epitaxy
- Deep Levels in SnTe-Doped GaSb Grown on GaAs by Molecular Beam Epitaxy
- Electrical Properties of Undoped and SnTe-Doped Ga_xIn_Sb Molecular-Beam-Epitaxially Growm on GaAs
- Electron Emission Properties of GaAsN/GaAs Quantum Well Containing N-Related Localized States : The Influence of Illuminance (Special Issue : Solid State Devices and Materials (1))
- Magnesium Doping of In-rich InGaN
- Electron Emission Properties of Nitrogen-Induced Localized Defects in InAsN/GaAs Quantum Dots
- Highly Stable Thermal Characteristics of a Novel In0.3Ga0.7As0.99N0.01(Sb)/GaAs High-Electron-Mobility Transistor
- Thickness Dependence of Current Conduction and Carrier Distribution of GaAsN Grown on GaAs
- Effect of Nitrogen Incorporation into InAs layer in InAs/InGaAs Self-Assembled Quantum Dots
- Properties of Defect Traps in Triple-Stack InAs/GaAs Quantum Dots and Effect of Annealing
- High-Efficiency Organic Electroluminescent Device with Multiple Emitting Units
- Electrical Properties of Metal–Silicon Nitride–Hydrogenated Amorphous Silicon Capacitor Elucidated Using Admittance Spectroscopy