Magnesium Doping of In-rich InGaN
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概要
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InN and In-rich InGaN were grown by metal organic vapor phase epitaxy with magnesium doping. A set of samples were grown at 550 °C, whereas a second set of samples were grown at increasing temperature with Ga content. Upon annealing, p-InGaN was obtained from the second set up to an In content above 50%, with an acceptor concentration of ${\sim}1\times 10^{19}$ cm-3 and a mobility of 1–2 cm2 V-1 s-1. None of the samples grown at a constant temperature of 550 °C showed a p-behavior after heat treatment. The electrical, optical, structural and morphological characteristics of the films grown were analyzed, and the leveling off of hole concentration beyond an In content of 30% was consistent with the reported decreasing activation energy of Mg with increasing In content.
- 2007-05-15
著者
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Chen Nie-chuan
Department Of Electrophysics National Chiao Tung University
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Chang Pen-Hsiu
Department of Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan, Republic of China
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Chang Chin-An
Department of Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan, Republic of China
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Tang Tzu-Yu
Department of Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan, Republic of China
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Liang Chi-Te
Department of Physics, National Taiwan University, Taipei, Taiwan, Republic of China
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Chen Nie-Chuan
Department of Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan, Republic of China
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Liang Chi-Te
Department of Physics, National Taiwan University, Taipei 106, Taiwan
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