Characterization of Single-Crystalline Aluminum Thin Film on (100) GaAs Substrate
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概要
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We have studied the structure and physical properties of an aluminum thin film grown on a (100) GaAs substrate. The X-ray diffraction (XRD) data shows that the Al film grown in situ by molecular beam epitaxy (MBE) is single crystalline. Compared with the polycrystalline film ex situ evaporated using an electron-gun (E-gun), the MBE-grown Al film has a high optical reflectivity in the visible and ultraviolet (UV) regime. In addition, the MBE-grown film has a 2-order-lower residue resistance, a 1-order-higher temperature coefficient of resistance, and a 2-order-larger magnetoresistance (MR) than the polycrystalline film. Owing to the long mean free time, the bulk-like electron-to-hole transition of Hall resistivity is observed for the first time in a nanoscale metal thin film. Our results suggest that MBE-grown Al thin films have great potential applications in metal-based nanoelectronics and nanophotonics.
- 2013-04-25
著者
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LIN Sheng-Di
Department of Electronics Engineering, National Chiao Tung University
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Liang Chi-Te
Department of Physics, National Taiwan University, Taipei, Taiwan, Republic of China
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Wu Jau-Yang
Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
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Lo Ming-Cheng
Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
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Lin Shi-Wei
Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
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Lin Ming-Huei
Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
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Lin Sheng-Di
Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
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Liang Chi-Te
Department of Physics, National Taiwan University, Taipei 106, Taiwan
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- Characterization of Single-Crystalline Aluminum Thin Film on (100) GaAs Substrate
- Characterization of Single-Crystalline Aluminum Thin Film on (100) GaAs Substrate