Lateral Two-Dimensional p--i--n Diode in a Completely Undoped GaAs/AlGaAs Quantum Well
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概要
- 論文の詳細を見る
A lateral two-dimensional p--i--n junction in an entirely undoped GaAs/AlGaAs quantum well has been fabricated. The optical and electrical characteristics of the junction are reported. The threshold voltage of the junction and the electroluminescence spectrum of the quantum well confirm the formation of the lateral two-dimensional junction.
- 2013-01-25
著者
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Lee Chien-ping
Department Of Electronic Engineering National Chiao Tung University
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LIN Sheng-Di
Department of Electronics Engineering, National Chiao Tung University
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Lee Chien-Ping
Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
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Dai Van-Truong
Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
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Lin Shih-Wei
Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
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Wu Jau-Yang
Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
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Li Liang-Chen
Center for Nano Science and Technology, National Chiao Tung University, Hsinchu 300, Taiwan
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Lin Sheng-Di
Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
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