Thermal Stability of Plasma-Treated Ohmic Contacts to n-GaN
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概要
- 論文の詳細を見る
In this study, the thermal stability of plasma-treated ohmic contacts by either Cl2/Ar or Ar plasma to n-GaN was investigated by high-temperature aging tests. With proper plasma treatment, ohmic contacts to n-GaN have a lower contact resistance than those without plasma treatment. High-temperature aging tests were performed at temperatures ranging from 400 to 600°C for 2 h in N2 or air ambient. No apparent electrical degradation in contact resistance was observed after aging, showing the thermal stability of plasma-treated ohmic contacts is not affected by the recovery of plasma-induced damages on the wafer surface.
- 2003-04-15
著者
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Lee Chien-ping
Department Of Electronic Engineering National Chiao Tung University
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Lee Chien-chi
Department Of Electronics Engineering National Chiao Tung University
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Lee Wei-i
Department Of Electrophysics And Microelectronics And Information Systems Research Center National C
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LIN Sheng-Di
Department of Electronics Engineering, National Chiao Tung University
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YEH Meng-Hsin
Department of Electrophysics, National Chiao Tung University
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KUO Cheng-Ta
R & D Department, Advanced Epitaxy Technology Inc.
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Kuo Cheng-Ta
R & D Department, Advanced Epitaxy Technology Inc., 119 Kuangfu N. Road, Hsinchu Industrial Park, Taiwan, R.O.C.
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Lin Sheng-Di
Department of Electronics Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu, Taiwan, R.O.C.
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Lee Wei-I
Department of Electrophysics, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu, Taiwan, R.O.C.
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Lee Chien-Ping
Department of Electronics Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu, Taiwan, R.O.C.
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Lee Chien-Chi
Department of Electronics Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu, Taiwan, R.O.C.
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Yeh Meng-Hsin
Department of Electrophysics, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu, Taiwan, R.O.C.
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