Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
This study examined how the duration of SiNx treatment on an underlying GaN layer affects the optical property, surface morphology and density of following InGaN quantum dots (QDs). InGaN QDs with extremely high density of near $3\times 10^{11}$ cm-2 exhibited strong photoluminescence (PL) emission at room temperature (RT). Increasing the duration of the SiNx treatment of the underlying GaN layer, the RT-PL peak of the following InGaN nano-islands and QDs was found to be red-shifted from the violet to the greenish region, and the spectrum was broadened. Additionally, the average height of InGaN nano-islands and QDs increased with the duration of SiNx treatment, explaining the redshift of the RT-PL peak.
- 2004-02-15
著者
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Wang Te-chung
Opto-electronics And System Laboratories Industrial Technology Research Institute
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Lee Chien-ping
Department Of Electronic Engineering National Chiao Tung University
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Tun Chun-ju
Institute Of Optical Science National Central University
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Lee Bing-chi
Department Of Electronic Engineering National Chiao Tung University
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Chi Gou-chung
Institute Of Optical Science National Central University
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Tsai Ching-en
Opto-electronics And System Laboratories Industrial Technology Research Institute
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Chi Jim
Opto-electronics & Systems Laboratories Industrial Technology Research Institute
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Tu Ru-chin
Opto-electronics & Systems Laboratories Industrial Technology Research Institute
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Chuo Chang-cheng
Opto-electronics & Systems Laboratories Industrial Technology Research Institute
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Chi Gou-Chung
Institute of Optical Science, National Central University, Chung-Li 32054, Taiwan, Republic of China
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Tun Chun-Ju
Institute of Optical Science, National Central University, Chung-Li 32054, Taiwan, Republic of China
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Tsai Ching-En
Opto-Electronics and System Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310, Republic of China
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Chuo Chang-Cheng
Opto-Electronics and System Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310, Republic of China
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Lee Chien-Ping
Department of Electronic Engineering, National Chiao Tung University, Hsinchu, Taiwan 30050, Republic of China
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Lee Bing-Chi
Department of Electronic Engineering, National Chiao Tung University, Hsinchu, Taiwan 30050, Republic of China
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Chi Jim
Opto-Electronics and System Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310, Republic of China
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