High-Resolution Scanning Electron Microscopy Observation of GaN/AlGaN Strained-Layer Superstructures in GaN-Based Violet Laser Diodes
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概要
- 論文の詳細を見る
Two hundred coupled layers of $n$-Al0.14Ga0.86N (3 nm)/$n$-GaN (3 nm) strained-layer superstructures (SLSs) with a $n$-GaN:Si layer were grown directly on a (0001) sapphire substrate by metalorganic vapor-phase epitaxy. With the aid of image processing, each SLS was definitely resolved as a bright or dark fringe 3 nm wide in the mapping of secondary electrons in a high-resolution scanning electron microscope.
- 2004-03-15
著者
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Yang Jer-ren
Institute Of Materials Science And Engineering National Taiwan University
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NAKAGAWA Mine
Application Technology Department, Hitachi Science Systems, Ltd.
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YAMADA Mitsuhiko
Application Technology Department, Hitachi Science Systems, Ltd.
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Saijo Hiroshi
Department Of Electronics And Information Science Kyoto Institute Of Technology
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Hsu Jung-tsung
Opto-electronics And System Laboratories Industrial Technology Research Institute
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Tu Ru-chin
Opto-electronics & Systems Laboratories Industrial Technology Research Institute
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Shiojiri Makoto
Department Of Electronics And Information Science Kyoto
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Hsu Jung-Tsung
Opto-Electronics and Systems Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310, Republic of China
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Shiojiri Makoto
Department of Electronics and Information Science, Kyoto Institute of Technology, Kyoto 606-8585, Japan
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Tu Ru-Chin
Opto-Electronics and Systems Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310, Republic of China
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Saijo Hiroshi
Department of Electronics and Information Science, Kyoto Institute of Technology, Kyoto 606-8585, Japan
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Yang Jer-Ren
Institute of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan 106, Republic of China
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Yamada Mitsuhiko
Application Technology Department, Hitachi Science Systems, Ltd., Ibaraki 312-8504, Japan
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Nakagawa Mine
Application Technology Department, Hitachi Science Systems, Ltd., Ibaraki 312-8504, Japan
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