High-Resolution Scanning Electron Microscopy Observation of GaN/AlGaN Strained-Layer Superstructures in GaN-Based Violet Laser Diodes

スポンサーリンク

概要

• 論文の詳細を見る

• Two hundred coupled layers of $n$-Al0.14Ga0.86N (3 nm)/$n$-GaN (3 nm) strained-layer superstructures (SLSs) with a $n$-GaN:Si layer were grown directly on a (0001) sapphire substrate by metalorganic vapor-phase epitaxy. With the aid of image processing, each SLS was definitely resolved as a bright or dark fringe 3 nm wide in the mapping of secondary electrons in a high-resolution scanning electron microscope.

• 2004-03-15

著者

• Yang Jer-ren

  Institute Of Materials Science And Engineering National Taiwan University

• NAKAGAWA Mine

  Application Technology Department, Hitachi Science Systems, Ltd.

• YAMADA Mitsuhiko

  Application Technology Department, Hitachi Science Systems, Ltd.

• Saijo Hiroshi

  Department Of Electronics And Information Science Kyoto Institute Of Technology

• Hsu Jung-tsung

  Opto-electronics And System Laboratories Industrial Technology Research Institute

• Tu Ru-chin

  Opto-electronics & Systems Laboratories Industrial Technology Research Institute

• Shiojiri Makoto

  Department Of Electronics And Information Science Kyoto

• Hsu Jung-Tsung

  Opto-Electronics and Systems Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310, Republic of China

• Shiojiri Makoto

  Department of Electronics and Information Science, Kyoto Institute of Technology, Kyoto 606-8585, Japan

• Tu Ru-Chin

  Opto-Electronics and Systems Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310, Republic of China

• Saijo Hiroshi

  Department of Electronics and Information Science, Kyoto Institute of Technology, Kyoto 606-8585, Japan

• Yang Jer-Ren

  Institute of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan 106, Republic of China

• Yamada Mitsuhiko

  Application Technology Department, Hitachi Science Systems, Ltd., Ibaraki 312-8504, Japan

• Nakagawa Mine

  Application Technology Department, Hitachi Science Systems, Ltd., Ibaraki 312-8504, Japan

関連論文

• High-Resolution Electron Microscopic Study of Oxides Formed by Coalescence of Smoke Particles of Bi_2O_3 and WO_3
• Electron Microscopic Study of Metal Oxide Smoke Particles Prepared by Burning Metals in Ar-O_2 Gas
• Study of InGaN red emission multiple Quantum Dots
• Quantitative intensity measurement of equal thickness fringes in Si and MgO crystal images with an energy-filtering transmission electron microscope using an imaging plate
• Transmiccion electron microscopy study of a semiconducting SrTiO_3 ceramic condenser
• Cross-Sectional Transmission Electron Microscopy of ZnO Tetrapod-Like Particles
• Fabrication of ZnO Nanopillars by Atomic Layer Deposition
• Performance of AlGaN/GaN Heterostrucrure FETs Over Temperatures
• Quartz Crystal Microbalance Techniques Applicable to the Studies of Sulphuration and Oxidation of Thin Metal Films
• Structure and Coalescence Growth of Smoke Particles of Tin Oxides and Lead Oxides Prepared by Burning the Metals in Mixture of Ar and O_2
• Electron Microscopic Observation on Sulphuration of Vacuum-Deposited Silver Films
• Observation of V Defects in Multiple InGaN/GaN Quantum Well Layers
• High-Resolution Scanning Electron Microscopy Observation of GaN/AlGaN Strained-Layer Superstructures in GaN-Based Violet Laser Diodes
• Simulation of atomic-scale high-angle annular dark field scanning transmission electron microscopy images
• Cathodoluminescence scanning electron microscopy observations of (SrBaCa)TiO_3 ceramic varistors
• A preparation method of sections of fine particles and cross-sectional transmission electron microscopy of Ni powder
• Electron Microscopic Observation of Au-Cu Alloy Particles Produced by Coalescence between Au and Cu Smoke Particles
• Structure and Electro-Optical Properties of Thin Films Grown by Alternate Atomic Layer Deposition of ZnO and Al_2O_3 on the Sapphire Substrate
• Differential Scanning Calorimetry of the Coalescenece Growth of Fine Smoke Particles
• Crystal Structures and Electrical Properties of Alkali Antimonides
• High-Resolution Scanning Electron Microscopy Observation of GaN/AlGaN Strained-Layer Superstructures in GaN-Based Violet Laser Diodes
• Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition
• Reaction of Iodine Vapor with Silver Films in the α-AgI Phase Region
• Reaction of Iodine Vapor with Copper Films
• Temperature and Iodine-Pressure Dependences of Electrical Conductivity of β-AgI Films
• High-Resolution Electron Microscopic Studies of CS Structure in Reduced WO_3 Thin Crystals
• Electron Microscopic Studies of Structure and Crystallization of Amorphous Metal Oxide Films
• Structure and Crystallization of Very Thin Amorphous WO_3 Films
• Measurement of Densities of Thin Amorphous Films Prepared by Vacuum-Evaporation
• Electron Microscopic Studies of Growth and Morphology of Te Crystals Prepared by Vacuum Deposition
• Crystal Growth from Amorphous Phase in Thin Films
• Desities of Amorphous Thin Films
• A Transmission Electron Microscopy Observation of Dislocations in GaN Grown on (0001) Sapphire by Metal Organic Chemical Vapor Deposition
• Thermal Effect of Ultrasonic Vibration of Quartz Crystal Microbalance on Chemical Reactions
• Study of InGaN Multiple Quantum Dots by Metal Organic Chemical Vapor Deposition
• Temperature-Dependent Electron Transport Properties of AlGaN/GaN Heterostructures

もっと見る 閉じる

スポンサーリンク