Comparison of InGaP/InGaAs/GaAs and InGaP/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistors : Semiconductors
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概要
- 論文の詳細を見る
We have studied the DC and RF characteristics of InGaP/InGaAs/AlGaAs and InGaP/InGaAs/GaAs pseudomorphic highelectron mobility transistors (PHEMTs). The InGaP gate barrier provides adequate carrier confinement for the channel carriers and at the same time eliminates the problems associated with AlGaAS. Excellent device performance was obtained for both types of devices. No short channel effect was observed at a gate length as low as 0.3μm. The InGaP/InGaAs/AlGaAs PHEMTs are superior in that they have higher transconductance, higher current carrying capability and better RF performance. This is attributed to the better carrier confinement at the back channel. These results demonstrate that InGaP/InGaAs/AlGaAs PHEMTs are favorable candidates for microwave applications.
- 社団法人応用物理学会の論文
- 2001-12-15
著者
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Lee Chien-ping
Department Of Electronic Engineering National Chiao Tung University
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Huang Ron-ting
Global Communication Technology Corp.
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Huang Chung-er
Department Of Electronics Engineering National Chiao Tung University
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Chang Mau-chung
Department Of Electrical Engineering University Of California Los Angeles
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Lee Chien-ping
Department Of Electronics Engineering National Chiao Tung University
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