Composition Modulation of In_xGa_<1-x>As Quantum Wells by Fast Dimer Arsenic Flux Change Using Valved Arsenic Cracker
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-01-30
著者
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Lee Chien-ping
Department Of Electronic Engineering National Chiao Tung University
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Lee C‐p
Department Of Electronic Engineering National Chiao Tung University
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Tsang Jian-Shihn
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University
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Tsai Kuang-Lung
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University
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LIU Der-Cherng
Department of Electronics Engineering and Institute of Electronics, National Chiao Tang University
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CHEN Horng-Rung
Department of Electronics Engineering and Institute of Electronics, National Chiao Tang University
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Tsang Jian-shihn
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Liu Der-cherng
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tang University
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Tsai Kuang-lung
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Chen Horng-rung
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tang University
関連論文
- Characterization of Improved AlGaAs/GaAs Resonant Tunneling Heterostructure Bipolar Transistors
- Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition
- Performance of AlGaN/GaN Heterostrucrure FETs Over Temperatures
- Temperature-Dependent Electron Transport Properties of AlGaN/GaN Heterostructures
- Effects of Low Temprature Grown GaAs Layer on Compositional Disordering of AlGaAs/GaAs Superlattices
- Composition Modulation of In_xGa_As Quantum Wells by Fast Dimer Arsenic Flux Change Using Valved Arsenic Cracker
- Thermal Stability of Plasma-Treated Ohmic Contacts to n-GaN
- Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition
- Photoluminescence Study of High-Quality InGaAs/GaAs Quantum Dots on (111) B GaAs Substrates
- Comparison of InGaP/InGaAs/GaAs and InGaP/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistors : Semiconductors
- Magneto-Photoluminescence Study of InGaAs/GaAs Quantum Wells and Quantum Dots Grown on (111)B GaAs Substrate
- Lateral Two-Dimensional p--i--n Diode in a Completely Undoped GaAs/AlGaAs Quantum Well
- Thermal Stability of Plasma-Treated Ohmic Contacts to n-GaN
- Mode Control of Vertical-Cavity Surface-Emitting Lasers by Germanium Coating
- Temperature-Dependent Electron Transport Properties of AlGaN/GaN Heterostructures